Effect of NaF evaporation on morphological and structural properties of Cu2ZnSnSe4 (CZTSe) thin film deposited by sputtering from a single compound target

Gour, Kuldeep Singh; Yadav, Akash; Parmar, Rahul; Singh, V. N.

doi:10.1016/j.jallcom.2017.05.098

Cited by 23 publications

(7 citation statements)

References 38 publications

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“…"> 2.Extrinsic doping with isoelectronic elements from the same family as Cu, Zn, and Sn: this includes Ag, Cd, and more extensively Ge 3.Extrinsic doping with alkaline elements: Li, Na, K, Rb, and Cs …”

Section: Challenges and Perspectives: How To Improve The Kesterite Efmentioning

confidence: 99%

“…The bulk of this work is inherited from the CIGSSe community, with Na and K having been the first to be investigated. In general, for kesterite, Na was related to an increase in the grain size, along with a modification of the carrier's concentration . The mechanisms behind the strong effect on carrier concentration due to Na doping is still unclear, because as Na occupies Cu position in principle, and is iso‐electronic to this element, no significant impact on the electric properties is expected.…”

Section: Challenges and Perspectives: How To Improve The Kesterite Efmentioning

confidence: 99%

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Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

et al. 2019

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The latest progress and future perspectives of thin film photovoltaic kesterite technology are reviewed herein. Kesterite is currently the most promising emerging fully inorganic thin film photovoltaic technology based on critical raw-material-free and sustainable solutions. The positioning of kesterites in the frame of the emerging inorganic solar cells is first addressed, and the recent history of this family of materials briefly described. A review of the fast progress achieved earlier this decade is presented, toward the relative slowdown in the recent years partly explained by the large opencircuit voltage (V OC ) deficit recurrently observed even in the best solar cell devices in the literature. Then, through a comparison with the close cousin Cu(In,Ga)Se 2 technology, doping and alloying strategies are proposed as critical for enhancing the conversion efficiency of kesterite. In the second section herein, intrinsic and extrinsic doping, as well as alloying strategies are reviewed, presenting the most relevant and recent results, and proposing possible pathways for future implementation. In the last section, a review on technological applications of kesterite is presented, going beyond conventional photovoltaic devices, and demonstrating their suitability as potential candidates in advanced tandem concepts, photocatalysis, thermoelectric, gas sensing, etc.Kesterite Photovoltaics He has supervised ten Ph.D. theses in the photovoltaic field. He is currently the coordinator of the research and innovation H2020 project STARCELL (www.starcell.eu), and the RISE (Marie Curie) project INFINITE-CELL (www.infinite-cell.eu).the V OC deficit for bandgaps close to 1.0 or 1.5 eV are comparable, and one can consider that kesterite is reasonably close to the state of the art of chalcopyrite materials in that range. But, while for kesterite the V OC deficit increases almost monotonically with the bandgap, it is markedly reduced for intermediate

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Section: Challenges and Perspectives: How To Improve The Kesterite Efmentioning

confidence: 99%

Section: Challenges and Perspectives: How To Improve The Kesterite Efmentioning

confidence: 99%

Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

et al. 2019

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“…[21,85] To overcome these problems, one way is to introduce alkali (Li, Na, and K) metal doping in kesterite absorber, which has proven beneficial effects in improving the device performance. [185][186][187] Besides alkali metal doping, cation substitution (Ag for Cu, Cd for Zn, Ge for Sn, etc.) is also an effective method to handle these issues.…”

Section: Discussionmentioning

confidence: 99%

Potential Role of Kesterites in Development of Earth‐Abundant Elements‐Based Next Generation Technology

et al. 2021

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Recently, Cu2ZnSn(S,Se)4 (CZTSSe)‐based kesterite thin films have received growing attention in a wide variety of fields due to their suitable physico‐chemical asset nano‐ and micro‐scale. The low elemental cost, earth abundance, and environment‐friendly nature have widened the scope and made it a potential material for developing next‐generation technology. The kesterite thin films have already shown their potential in thin‐film photovoltaics (PVs) with a record efficiency of nearly 12.6%. Apart from solar cells, they have also demonstrated their widespread applicability in the field of photodetectors, gas sensors, thermoelectrics, solar water splitting, energy storage, humidity sensors, antibacterial activities, and many more. This review aims to present an overview of the advancement in the CZTSSe‐based kesterite thin films in terms of synthesis, material properties, and their use in various applications. A comprehensive review of each device application contains ongoing progress, device fabrication, and related issues. Furthermore, this review emphasizes kesterite materials and possible solutions to proposed pitfalls, thus strengthening kesterite's perspective.

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“…Also, making buffer layer by chemical method require breaking of vacuum for removing and inserting the samples which is not only cumbersome and costly but also is a time consuming process. CIGS and CZTS absorber thin films have been already deposited and conditions for various applications have been optimized [15][16][17][18][19][20]. As CIGS based thin film solar cells with high efficiency using sputtering technique have already been commercialized, therefore, sputtered Zn(O,S) thin films as buffer layer would be compatible with CIGS and CZTS based solar cells processes.…”

Section: Introductionmentioning

confidence: 99%

Effect of sulfurization temperature on optical and compositional properties of sputtered Zn(O, S) thin films

Gour¹,

Yadav²,

Kumar³

et al. 2018

Adv. Mater. Lett.

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Zinc oxysulfide or Zn(O,S) is emerging as an alternate n-type buffer layer for kesterite, chalcogenides and CdTe based thin film solar cell due to it is being made from non-toxic elements and tunable bandgap, its suitable optical and electrical properties required for a buffer layer. Generally, buffer layers of these solar cells are deposited using chemical bath deposition (CBD) techniques, but these require breaking of vacuum and again inserting the sample in vacuum during solar cell fabrication, which is not economical and is cumbersome. Sputtering is considered to be industrial process and therefore, here we have deposited Zn(O,S) thin film by sputtering technique and effect of sulfurization temperature on bandgap and composition of Zn(O,S) films have been studied. The bandgap of deposited films changed from 3.36 eV to 3.15 eV by changing the sulfurization temperatures. By changing the sulfurization temperature, the composition of films also changed. Crystallite size (D) of Zn(O,S) films increased from 12.1 nm to 22.3 nm by varying the sulfur content for samples S1-S4, respectively. Optical, morphological, compositional and structural properties have been studied using UV-Vis-NIR spectroscopy, Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS) and X-ray diffractometer (XRD), respectively.

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Effect of NaF evaporation on morphological and structural properties of Cu2ZnSnSe4 (CZTSe) thin film deposited by sputtering from a single compound target

Cited by 23 publications

References 38 publications

Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

Potential Role of Kesterites in Development of Earth‐Abundant Elements‐Based Next Generation Technology

Effect of sulfurization temperature on optical and compositional properties of sputtered Zn(O, S) thin films

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