2019
DOI: 10.1002/adma.201806692
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Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

Abstract: The latest progress and future perspectives of thin film photovoltaic kesterite technology are reviewed herein. Kesterite is currently the most promising emerging fully inorganic thin film photovoltaic technology based on critical raw-material-free and sustainable solutions. The positioning of kesterites in the frame of the emerging inorganic solar cells is first addressed, and the recent history of this family of materials briefly described. A review of the fast progress achieved earlier this decade is presen… Show more

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Cited by 360 publications
(327 citation statements)
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References 166 publications
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“…Ge‐incorporated Cu 2 Zn(Sn 1– x Ge x )Se 4 (CZTGSe) with kesterite crystal structure has attracted attention as a material for p‐type light absorbers in heterojunction solar cells . This is because the bandgap energy ( E g ) can be tuned from 1.0 to 1.4 eV by adjusting the cationic mixing ratios {Ge/(Ge + Sn) = x } from 0 to 1 .…”
mentioning
confidence: 99%
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“…Ge‐incorporated Cu 2 Zn(Sn 1– x Ge x )Se 4 (CZTGSe) with kesterite crystal structure has attracted attention as a material for p‐type light absorbers in heterojunction solar cells . This is because the bandgap energy ( E g ) can be tuned from 1.0 to 1.4 eV by adjusting the cationic mixing ratios {Ge/(Ge + Sn) = x } from 0 to 1 .…”
mentioning
confidence: 99%
“…Ge-incorporated Cu 2 Zn(Sn 1-x Ge x )Se 4 (CZTGSe) with kesterite crystal structure has attracted attention as a material for p-type light absorbers in heterojunction solar cells. [1][2][3][4][5][6][7][8][9][10][11][12] This is because the bandgap energy (E g ) can be tuned from 1.0 to 1.4 eV by adjusting the cationic mixing ratios {Ge/(Ge þ Sn) ¼ x} from 0 to 1. [7,[13][14][15][16] Using this material as a light absorber, the open circuit voltage (V OC ) loss can be improved compared with that of non-Ge-incorporated Cu 2 ZnSnSe 4 (CZTSe) (x ¼ 0) [7] and large grains of polycrystalline CZTGSe in the thin film.…”
mentioning
confidence: 99%
“…The understanding of dopant/alloying element induced changes particularly in the point defects and associated interface engineering would lead to further performance improvement. For a more complete review of the recent approaches of cation substitution in kesterites, readers may refer to the review article by Giraldo et al [55].…”
Section: Chalcogenidesmentioning
confidence: 99%
“…The main objective of kesterite alloying is to enable the tuning of the properties of the material for advanced device engineering. It is also viewed as a possible solution for intrinsic problems of kesterite absorbers like the Cu/Zn disorder or Sn-multivalency [126]. The most interesting alloying elements for kesterites are Ag replacing Cu, Cd replacing Zn, and Ge replacing Sn for cationic substitution, as well as Se replacing S for anionic substitution [126].…”
Section: Alloying Of Kesterite For Bandgap Grading: S/se Zn/cd and Gmentioning
confidence: 99%
“…It is also viewed as a possible solution for intrinsic problems of kesterite absorbers like the Cu/Zn disorder or Sn-multivalency [126]. The most interesting alloying elements for kesterites are Ag replacing Cu, Cd replacing Zn, and Ge replacing Sn for cationic substitution, as well as Se replacing S for anionic substitution [126]. In principle, the introduction of all these elements in the basic kesterite structure can be performed by the PVD techniques described above and the monograin powder technology.…”
Section: Alloying Of Kesterite For Bandgap Grading: S/se Zn/cd and Gmentioning
confidence: 99%