Effect of moisture on electrical properties and reliability of low dielectric constant materials

Cheng, Yi-Lung; Leon, Ka-Wai; Huang, Jun-Fu; Chang, Wei-Yao; Chang, Yu‐Min; Leu, Jihperng

doi:10.1016/j.mee.2013.08.018

Cited by 45 publications

(27 citation statements)

References 17 publications

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“…The removal of chemisorbed moisture also helps to reduce the thermal activation energy of time dependent dielectric breakdown. However, recent results from Cheng et al 51 point out that annealing at 400…”

Section: Reliability After Integrationmentioning

confidence: 99%

Electrical Reliability Challenges of Advanced Low-k Dielectrics

Baklanov

et al. 2014

ECS J. Solid State Sci. Technol.

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We review the latest studies that address the fundamental understanding of low-k dielectric electrical properties and reliability. We focus on the results discussing the nature of process induced defects, leakage currents and breakdown behavior, as they are important factors to reveal material modification and damage. Issues related to the use of porogen based PECVD techniques during dielectric deposition are discussed, where we focus on the selection of matrix and porogen precursors and on the improvements related to post-deposition treatments. During damascene integration, low-k dielectrics are subjected to several processes that induce material damage, where we review recent learning about plasma exposure, barrier deposition and chemical mechanical polishing. In order to have a successful implementation of advanced ultralow-k films in back-end-of-line interconnects, we argue that more research efforts are needed with respect to its material development, integration and reliability and make some proposals for future work. The development and integration of reliable low-k materials is a key challenge for next generation interconnect technologies. Driven by the requirement of performance increase, highly porous low-k dielectrics are incorporated in deeply scaled back-end-of-line (BEOL) interconnects. In general, there are three important concerns during the study of low-k dielectric electrical properties and reliability: a) the k-value of the dielectric after integration should maintain relatively unchanged, b) the leakage current of the dielectric between metal lines should be low, and c) the time dependent dielectric breakdown (TDDB) failure time of the integrated BEOL structure at operating conditions should meet its specifications. 1Porous SiOCH low-k dielectrics deposited by plasma enhanced chemical vapor deposition (PECVD) techniques are the dominant choice for k>2.2 film depositions and are also potential candidates for ultralow-k (k<2.2) dielectric applications.2 In the past years, significant efforts have been spent to understand their material properties and integration challenges. The bond structures of low-k dielectrics is complex due to the non-equilibrium nature of the PECVD technique.

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Section: Reliability After Integrationmentioning

confidence: 99%

Electrical Reliability Challenges of Advanced Low-k Dielectrics

Baklanov

et al. 2014

ECS J. Solid State Sci. Technol.

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“…What is more, creation of moisture throughout the dielectric nanocomposites can lead to significant decrease in both dielectric constant and dielectric loss [46]. Absorbed moisture not only can lead to decrease in the electrical performance but also can deteriorate the reliability of the dielectric materials [47]. Thus, removal of moisture and bubbles from nanocomposites has high level of importance.…”

Section: Figure 7(a)mentioning

confidence: 99%

Electric Field Induced Alignment of Carbon Nanotubes: Methodology and Outcomes

Amani¹,

Hashemi²,

Mousavi³

et al. 2018

Carbon Nanotubes - Recent Progress

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In the current chapter, achievement of aligned carbon nanotube (CNT) network within the matrix via various kinds of electric fields (AC and DC) was evaluated. In this case, alignment mechanism of CNTs within the matrix and two useful techniques for justification of CNT alignment throughout the matrix were examined and presented, respectively. Afterward, effective factors in matter of CNT alignment and applicable procedures for fabrication of nanocomposites containing aligned CNTs were studied and presented, respectively. At the end, significant effects of CNT alignment on overall properties of nanocomposites that include electrical and mechanical properties were evaluated. Achieved results revealed that alignment of CNTs within the matrix can lead to significant improvement in the electrical and mechanical properties of nanocomposites at the same filler loading compared with randomly distribution of CNTs within the matrix, while production steps and conditions can also highly affect the outcome data.

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“…It was concluded that sealing is essential for protecting the Cu interconnects. The effect of moisture depends strongly on the microstructure of the sealing (Cheng et al, 2014). Dense dielectrics are more beneficial than porous materials.…”

Section: Diffusive Regimementioning

confidence: 99%

Electromigration and the structure of metallic nanocontacts

Hoffmann‐Vogel

2017

Applied Physics Reviews

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FIG. 5. STM set-up used in the literature for studying nanoscale metallic junctions with TEM. The set-up very much resembles a standard STM setup, except that this instrument is used under the electron beam of a TEM. Reprinted with permission from Ohnishi et al., Nature 395, 780 (1998). FIG. 6. (a) If microscopic and macroscopic effects are to be summarized in one picture, diffusion under the influence of electromigration forces can be understood as hopping in a tilted washboard-potential. (b) Energy landscape for a hopping atom with a definition of its energy parameters.

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Effect of moisture on electrical properties and reliability of low dielectric constant materials

Cited by 45 publications

References 17 publications

Electrical Reliability Challenges of Advanced Low-k Dielectrics

Electrical Reliability Challenges of Advanced Low-k Dielectrics

Electric Field Induced Alignment of Carbon Nanotubes: Methodology and Outcomes

Electromigration and the structure of metallic nanocontacts

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