Effect of irradiation temperature on dynamic recovery in gallium nitride

Jiang, Weilin; Weber, William J.

doi:10.1016/j.nimb.2005.08.163

Cited by 5 publications

(3 citation statements)

References 14 publications

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“…For example, the minimum hydrogen dose required to observe surface blistering in Si, Ge or SiC is about 3 × 10 16 H + 2 cm −2 [11,13,14]. It is known from the literature that the group III nitrides such as AlN and GaN exhibit very efficient dynamic annealing of the implantation-induced defects [20][21][22][23][24]. In the process of blistering, the implanted hydrogen interacts with the implantation-induced damage inside the semiconductor lattice that ultimately leads to the formation of extended defects such as nanovoids/nanoplatelets [9,10,13,25].…”

Section: Resultsmentioning

confidence: 99%

Investigation of blistering kinetics in hydrogen implanted aluminium nitride

Singh

Scholz

Christiansen

et al. 2008

Semicond. Sci. Technol.

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Epitaxial layers of aluminium nitride (AlN) grown on sapphire by hydride vapour phase epitaxy (HVPE) were implanted with 100 keV hydrogen, H + 2 , ions with doses in the range of 5 × 10 16 -2.5 × 10 17 cm −2 and subsequently annealed in ambient air at temperatures between 450 and 750• C in order to determine the kinetics of surface blister formation in AlN. The Arrhenius plot of the blistering time versus temperature shows two different activation energies for the formation of surface blisters: 0.44 eV in the higher temperature regime of 550-750• C and 1.16 eV in the lower temperature regime of 450-550• C. The implantation-induced damage was analyzed by cross-sectional transmission electron microscopy, which revealed a band of defects extending from 330 to 550 nm from the surface of AlN. The XTEM image of the implanted and annealed AlN displayed clearly the formation of microcracks that ultimately lead to the formation of surface blisters.

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Section: Resultsmentioning

confidence: 99%

Investigation of blistering kinetics in hydrogen implanted aluminium nitride

Singh

Scholz

Christiansen

et al. 2008

Semicond. Sci. Technol.

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“…Typically, the accumulation of stable defects in irradiated semiconductors, which can eventually result in amorphization, can be reduced by increasing the implantation temperature. In GaN, the accumulated damage decreases rather sharply as the irradiation temperature is increased up to 300 • C, and more slowly above that [40]. On the other hand, high fluence ion implantation at elevated temperatures (550 • C) has been reported to induce dramatic erosion of GaN [41].…”

Section: Introductionmentioning

confidence: 99%

Paramagnetism and antiferromagnetic interactions in Cr-doped GaN

Pereira

Som

Demeulemeester

et al. 2011

J. Phys.: Condens. Matter

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We report on the magnetic and structural properties of Cr-doped GaN prepared by ion implantation of epitaxial thin films. Based on a detailed analysis of the magnetometry data, we demonstrate that the magnetic interactions between Cr moments in GaN are antiferromagnetic (AFM). Increasing the Cr fractional concentration up to 0.35, we observe that strong nearest cation neighbor AFM coupling results in the reduction of the effective moment per Cr atom. The uncompensated Cr moments exhibit paramagnetic behavior and we discuss to what extent the effects of an anisotropic crystal field and AFM interactions can be inferred from the magnetization data. We discuss the observed changes in magnetic and structural properties induced by thermal annealing in terms of defect annealing and Cr aggregation.

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“…In the literature, the studies performed for GaN showed some discrepancies. For instance, Parikh et al [24] and Jiang et al [25] reported a decreasing damage accumulation with increasing implantation temperature from room temperature (RT) to 550 ºC. For the wider range investigated by Usov et al…”

Section: Accepted Manuscriptmentioning

confidence: 99%