Investigation of blistering kinetics in hydrogen implanted aluminium nitride

Singh, Rajendra; Scholz, Roland; Christiansen, Silke; Gösele, U.

doi:10.1088/0268-1242/23/4/045007

Cited by 9 publications

(8 citation statements)

References 26 publications

(62 reference statements)

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“…Direct wafer bonding in combination with layer transfer of thin films via hydrogen implantation‐induced layer splitting, the so‐called ion‐cut technique, is a very promising technique for the fabrication of inexpensive templates of high structural quality 5–7. Hence by using this method the free‐standing AlN substrate can be utilised to transfer multiple layers on to other foreign substrates 8–10. For this process to occur a narrow parameter window of implantation dose, implantation temperature, annealing temperature and time has to be defined since all these parameters depend strongly on the type of semiconductor material used for implantation 11, 12.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen implantation‐induced large area exfoliation in AlN epitaxial layers

Dadwal

Scholz

Kumar

et al. 2010

Physica Status Solidi (a)

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Hydrogen ion implantation in aluminium nitride (AlN) epitaxial layers grown on 2‐inch c‐plane (0001) sapphire substrates was performed with different fluences in the range of 1 × 1017–2 × 1017/cm2 at various implantation temperatures between liquid nitrogen (LN2) to 300 °C. The post‐implantation thermal annealing behaviour of these samples was studied by using optical microscopy, atomic force microscopy (AFM) and transmission electron microscopy (TEM). Our investigations showed that AlN samples that were implanted at LN2 and room temperature (RT) exhibited mostly surface blistering after post‐implantation annealing. On the other hand, the AlN samples that were implanted at 100 and 300 °C showed large area exfoliation of the implanted surface after post‐implantation annealing. The implantation‐induced damage in AlN was analysed by cross‐sectional TEM, which revealed a damage band inside the AlN layer in all the cases that was decorated with hydrogen‐filled nanovoids. These nanovoids showed a greater tendency of agglomerating together to form nanocracks in the as‐implanted state for 100 and 300 °C implanted samples leading eventually to the large area exfoliation after high temperature annealing.

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Section: Introductionmentioning

confidence: 99%

Hydrogen implantation‐induced large area exfoliation in AlN epitaxial layers

Dadwal

Scholz

Kumar

et al. 2010

Physica Status Solidi (a)

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“…12 Similar to GaN, it is important to study blistering in H-implanted AlN from the layer transfer application point of view. Blistering in H-implanted AlN was recently reported by Singh et al 66 In this investigation, epitaxial layers of AlN grown on sapphire were implanted with 100-keV hydrogen, H 2 + ions with doses in the range of 5 9 10 16 cm À2 to 2.5 9 10 17 cm À2 at RT and subsequently annealed in ambient air at temperatures between 450°C and 750°C to determine the kinetics of surface blister formation in AlN. A typical optical image of the surface blistering in a H-implanted and annealed AlN epitaxial layer is shown in Fig.…”

Section: Alnmentioning

confidence: 74%

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Singh

Christiansen

Moutanabbir

et al. 2010

Journal of Elec Materi

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Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many parameters such as the semiconductor material, ion fluence, ion energy, and implantation temperature. The optimum values of these parameters for compound semiconductors are presented. The blistering and splitting processes in silicon have been studied in detail, motivated by the fabrication of the widely used silicon-on-insulator wafers. Hence, a comparison of the blistering process in Si and compound semiconductors is also presented. This comparative study is technologically relevant since ion implantation-induced layer splitting combined with direct wafer bonding in principle allows the transfer of any type of semiconductor layer onto any foreign substrate of choice-the technique is known as the ion-cut or Smart-Cut (TM) method. For the aforementioned compound semiconductors, investigations regarding layer transfer using the ion-cut method are still in their infancy. We report feasibility studies of layer transfer by the ion-cut method for some of the most important and widely used compound semiconductors. The importance of characteristic values for successful wafer bonding such as wafer bow and surface flatness as well as roughness are discussed, and difficulties in achieving some of these values are pointed out

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“…(Fig. 5) shows a damage band extending between 330−550 nm from the surface [16]. When a high magnification XTEM image (Fig.…”

Section: Resultsmentioning

confidence: 96%

“…Inset shows high magnification image of a selected region in the damage band [15]. In case of hydrogen implanted AlN layers the minimum hydrogen ion fluence to observe blistering was found out to be 2×10 17 cm −2 [16]. (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In case of ZnO, c-plane oriented bulk crystals having thickness of 500 µm were used. All these samples were implanted with 50 keV H + ions with various fluences in the range of 5×10 16 Contributed Article have used 100 keV H 2 + ions. After implantation the samples were cut into different small pieces and annealed at higher temperatures up to 800 °C for 1 hour in air ambient.…”

Section: Methodsmentioning

confidence: 99%

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Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications

Singh

Dadwal

Scholz

et al. 2010

Phys. Status Solidi (c)

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We present an overview of the implantation‐induced blistering/exfoliation process in wide bandgap semiconductors such as GaN, AlN and ZnO. These semiconductors were implanted with 50 keV hydrogen ions at various fluences and subsequently annealed at higher temperatures up to 800 °C in order to trigger surface blistering. In the case of GaN and AlN, a detailed blistering kinetics investigation was also performed. Various techniques such as optical microscopy, atomic force microscopy, cross‐sectional transmission electron microscopy and stylus profilometry were used for the characterization of the implanted samples. In the case of room temperature implanted samples, it was observed that the damage band formed inside the samples was decorated with hydrogen filled nanovoids. These nanovoids served as precursors for the formation of two‐dimensional extended defects called nanocracks and microcracks upon annealing and eventually led to surface blistering or exfoliation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Investigation of blistering kinetics in hydrogen implanted aluminium nitride

Cited by 9 publications

References 26 publications

Hydrogen implantation‐induced large area exfoliation in AlN epitaxial layers

Hydrogen implantation‐induced large area exfoliation in AlN epitaxial layers

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications

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