Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys

Perrin, J.; Takeda, Yoshihiko; Hirano, Naoto; Matsuura, Hideharu; Matsuda, Akihisa

doi:10.1143/jjap.28.5

“…As no data are available yet, unity sticking probability is assumed following the literature. 9,10 For this reason the contribution calculated and depicted in Figs. 11 and 12 is called the maximum contribution of the cluster ions to film growth.…”

Section: ϫ13mentioning

confidence: 99%

“…Neglecting the contribution of positive ions is frequently based on the low electron density usually found in these types of plasmas. However in this reasoning it is passed over that the ions have presumably unity sticking probability 9,10 and that the ions can also contain more than one silicon atom. 11 Moreover, apart from this direct contribution to film growth, the positive ions can also have an indirect contribution.…”

Section: Introductionmentioning

confidence: 99%

Formation of cationic silicon clusters in a remote silane plasma and their contribution to hydrogenated amorphous silicon film growth

Kessels

¹

,

Leewis

²

,

Sanden

³

et al. 1999

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The formation of cationic silicon clusters Si n H m ϩ by means of ion-molecule reactions in a remote Ar-H 2 -SiH 4 plasma is studied by a combination of ion mass spectrometry and Langmuir probe measurements. The plasma, used for high growth rate deposition of hydrogenated amorphous silicon ͑a-Si:H͒, is based on SiH 4 dissociation in a downstream region by a thermal plasma source created Ar-H 2 plasma. The electron temperature, ion fluence, and most abundant ion emanating from this plasma source are studied as a function of H 2 admixture in the source. The electron temperature obtained is in the range of 0.1-0.3 eV and is too low for electron induced ionization. The formation of silicon containing ions is therefore determined by charge transfer reactions between ions emanating from the plasma source and SiH 4 . While the ion fluence from the source decreases by about a factor of 40 when a considerable flow of H 2 is admixed in the source, the flux of cationic silicon clusters towards the substrate depends only slightly on this H 2 flow. This implies a strong dissociative recombination of silicon containing ions with electrons in the downstream region for low H 2 flows and it causes the distribution of the cationic silicon clusters with respect to the silicon atoms present in the clusters to be rather independent of H 2 admixture. The average cluster size increases, however, strongly with the SiH 4 flow for constant plasma source properties. Moreover, it leads to a decrease of the...

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“…On the other hand, the presence of ions can provide a type of ion-enhanced surface mobility, a concept necessary in the deposition model based on the indirect deposition of the Sill2 radical through the production of Si2H 6 in the gas phase. Recent results using VHF PECVD of a-Si:H [48][49][50][51][52] lead to conflicting conclusions on the deposition mechanism. Some results indicate a larger role of the ions and even demonstrate a dependence of the growth on the ion density [49,51 ]; others indicate a larger dissociation degree of silane [50,52].…”

Section: Fast Deposition Of A-si" Hmentioning

confidence: 99%

The role of hydrogen during plasma beam deposition of amorphous thin films

Sanden

¹

,

Severens

²

,

Meulenbroeks

³

et al. 1995

Surface and Coatings Technology

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. AbstractThe influence of wall-associated H 2 molecules and other hydrogen-containing monomers on the degree of ionization in the expanding thermal plasma used for the fast plasma beam deposition of amorphous hydrogenated carbon (a-C : H) and amorphous hydrogenated silicon (a-Si:H) was determined. Deposition models are discussed with emphasis on the specific role of the ion during deposition. The connection between the role of atomic hydrogen and the degree of ionization in the plasma beam deposition of a-C : H and a-Si: H is addressed.

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“…Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloys have generated a lot of interest both fundamentally and technologically [1][2][3][4][5][6][7][8][9][10][11][12]. By alloying hydrogenated amorphous silicon (a-Si:H) with Ge, it is possible to decrease the band gap and thus improving the long wavelength response of the solar cells.…”

Section: Introductionmentioning

confidence: 99%