The role of hydrogen during plasma beam deposition of amorphous thin films

Abstract

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. AbstractThe influence of wall-associated H 2 molecules and other hydrogen-containing monomers on the degree of ionization in the expanding thermal plasma used for the fast plasma beam deposition of amorphous hydrogenated carbon (a-C : H) and amorphous hydrogenated silicon (a-Si:H) was determined. Deposition models are discussed with emphasis on the specific role of the ion during deposition. The connection between the role of atomic hydrogen and the degree of ionization in the plasma beam deposition of a-C : H and a-Si: H is addressed.

Ultrathin diamondlike carbon films deposited by filtered carbon vacuum arcs

“…[20,21] There are large variations even within each class of materials, depending on the method and parameters of deposition. Diamond-like carbon films can be synthesized by argon sputter deposition using a graphite target [12,22], by pulsed laser ablation of graphite [19], direct ion beam deposition [23], plasma beam deposition [24], mass-selected ion beam deposition [25,26], electron-cyclotronresonance plasma chemical vapor deposition (ECR plasma CVD) [27], radio-frequency-CVD [11], and by filtered cathodic arc plasma deposition [6,16,20,21]. Research over the last years has identified filtered cathodic arc deposition as one of the promising techniques for hard carbon films thinner than 5 nm [28,29].…”