Effect of interphase boundaries on resistivity and thermopower of nanocrystalline Re-Si thin film composites

Burkov, A. T.; Heinrich, A.; Gladun, C.; Pitschke, W.; Schumann, J.

doi:10.1103/physrevb.58.9644

Cited by 26 publications

(17 citation statements)

References 9 publications

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“…The sign of S is negative indicating typical n-type semiconductors for all annealing times and within the whole considered range of temperature. The absolute value of Seebeck coefficient S increases with increasing the ambient temperature T amb in the low temperature range to its maximum at a certain temperature T m and then decreases due to thermally excited carriers [41,45]. The effect of the grain boundary on the thermopower is much less than that on conductivity [46,47].…”

Section: Resultsmentioning

confidence: 93%

Electrical and thermoelectric properties of PbSe doped with Sm

Ibrahim

Saleh

Ibrahim

et al. 2008

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 93%

Electrical and thermoelectric properties of PbSe doped with Sm

Ibrahim

Saleh

Ibrahim

et al. 2008

Journal of Alloys and Compounds

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“…In nanocrystalline thin films an unexpected behaviour of the thermopower and the electrical resistance could be identified [1]. By changing the nanocrystalline fraction within an amorphous matrix the thermopower shows a maximum.…”

Section: Introductionmentioning

confidence: 99%

Nanostructure and thermoelectric properties of ReSi 2±x thin films

Thomas

Hofman

Kleint

et al. 2002

Analytical and Bioanalytical Chemistry

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Anomalies in the nanostructure evolution of ReSi(2+/-x) thin films have proved to be of large interest in connection with their thermoelectric properties. By means of electron microscopic methods the correlation between structural properties and transport behaviour has been studied. The short-range order of the amorphous state was characterised by reduced density functions calculated from diffuse electron diffraction diagram and is found to correlate with the temperature dependence of the electrical resistance. The crystallisation process observed in situ in the transmission electron microscope starts with the formation of relatively large ReSi(1.75) grains (up to 100 nm). In later stages, only smaller grains are growing. This leads to a decrease in the mean grain size and to the increase of the nanocrystalline volume fraction during the heat treatment. This behaviour allows the investigation of the thermopower as function of the nanocrystalline volume fraction. Thus, at a nanocrystalline content of about 35% the thermopower exhibits a maximum in accordance with calculations.

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“…Moreover, theories of conventional broad-band semiconductors predict that there is a general tendency for S and to vary in a reciprocal way resulting in dif"cult problems in the development of thermoelectric materials. The modern approaches to overcome this situation include producing materials as quantum wells or a superlattices (1), nanocrystalline composites (2), and electroncrystal, phonon-glass materials (3,4). Since of the thermoelectric system improves with increasing temperature difference, high-temperature operation is an alternative route to improve the conversion ef"ciency.…”

Section: Introductionmentioning

confidence: 99%