Structure and Thermoelectric Properties of Me-Substituted In4Sn3O12, Me=Y and Ti

Pitschke, W.; Werner, J.; Behr, G.; Koumoto, Kunihito

doi:10.1006/jssc.2000.8781

Cited by 15 publications

(5 citation statements)

References 25 publications

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“…It has been reported with a relatively low resistivity of 0.03 Ω cm at room temperature . However, the study of this oxide by Pitschke et al . has claimed this system as a poor thermoelectric with ZT ~ 0.03 (1000 K) and attributed the poor performance to high porosity.…”

Section: N‐type Materials Candidatesmentioning

confidence: 95%

“…It has been reported with a relatively low resistivity of 0.03 Ω cm at room temperature. 165 However, the study of this oxide by Pitschke et al 166 has claimed this system as a poor thermoelectric with ZT~0.03 (1000 K) and attributed the poor performance to high porosity. The following studies have also emphasized the difficulty of achieving well sintered products, with the maximum relative density obtained at only 60%.…”

Section: N-type Materials Candidatesmentioning

confidence: 99%

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Thermoelectric Ceramics for Energy Harvesting

et al. 2012

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Metal oxides (Ca3Co4O9, CaMnO3, SrTiO3, In2O3), Ti sulfides, and Mn silicides are promising thermoelectric (TE) material candidates for cascade‐type modules that are usable in a temperature range of 300–1200 K in air. In this paper, we review previous studies in the field of TE materials development and make recommendations for each material regarding future research. Furthermore, the R&D of TE modules composed of metal oxide materials and the prospect of their commercialization for energy harvesting is demonstrated.

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Section: N‐type Materials Candidatesmentioning

confidence: 95%

Section: N-type Materials Candidatesmentioning

confidence: 99%

Thermoelectric Ceramics for Energy Harvesting

et al. 2012

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“…Pitschke et al 8 reported the structure and thermoelectric properties of In 4 Sn 3 O 12 substituted with yttrium and titanium. More recently a cosubstituted solid solution was reported between In 4 Sn 3 O 12 and In 5.5 Sb 1.5 O 12 by Chiosnet et al 9,10 The isovalent substitution of a pair of In 3+ and Sb 5+ ions for two Sn 4+ ions results in the formation of an extended solid solution according to the formula In 4+x Sn 3−2x Sb x O 12 .…”

Section: Introductionmentioning

confidence: 98%

Surface composition and electronic structure of the In4+xSn3−2xSbxO12 (≤x≤1) solid solution

O’Neil

Egdell

Edwards

2010

Journal of Applied Physics

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The electronic structures of In4Sn3O12, In5SnSbO12 and the intermediate solid solution In4+xSn3−2xSbxO12 have been studied by x-ray photoemission spectroscopy. The surfaces were found be consistently rich in indium and deficient in tin, with the extent of the deviation from bulk stoichiometry decreasing with increasing cosubstitution of In and Sb for Sn. We find that the valence band structure of the In4+xSn3−2xSbxO12 solid solution evolves with the degree of cosubstitution and shows well-defined features that arise from the hybridization of O 2p states with In 5s, Sn 5s, and Sb 5s states. We determine the fundamental electronic gaps of In4Sn3O12 and In5SnSbO12 as 2.66 eV and 2.79 eV, respectively.

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“…As was indicated before, indium is a quite expensive element. Pitschke et al [196], studying In4Sn3O12, concluded that this system is a poor thermoelectric material with a ZT ~ 0.03 (1000 K), while Zhou et al [174] have established that this material after the addition of small amounts of Ga2O3 and reactive sintering had a ZT ~ 0.25 at the same temperature. This maximum originates from the combination of significantly low electrical resistivity and thermal conductivity as compared to the parent In4Sn3O12 composition.…”

Section: Sintered Samplesmentioning

confidence: 99%

In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion

Brînzari

Ham

2018

Crystals

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Abstract:In this paper, the thermoelectric properties of In 2 O 3 -based materials in comparison with other thermoelectric materials are considered. It is shown that nanostructured In 2 O 3 Sn-based oxides are promising for thermoelectric applications at moderate temperatures. Due to the nanostructure, specific surface properties of In 2 O 3 and filtering effects, it is possible to significantly reduce the thermal conductivity and achieve an efficiency of thermoelectric conversion inaccessible to bulk materials. It is also shown that a specific surface state at the intergrain boundary, optimal for maximizing the filtering effect, can be achieved through (1) the engineering of grain boundary parameters, (2) controlling the composition of the surrounding atmosphere, and (3) selecting the appropriate operating temperature.

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Structure and Thermoelectric Properties of Me-Substituted In4Sn3O12, Me=Y and Ti

Cited by 15 publications

References 25 publications

Thermoelectric Ceramics for Energy Harvesting

Thermoelectric Ceramics for Energy Harvesting

Surface composition and electronic structure of the In4+xSn3−2xSbxO12 (≤x≤1) solid solution

In2O3-Based Thermoelectric Materials: The State of the Art and the Role of Surface State in the Improvement of the Efficiency of Thermoelectric Conversion

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