Enhancement of the Seebeck coefficient (S ) without reducing the electrical conductivity (sigma) is essential to realize practical thermoelectric materials exhibiting a dimensionless figure of merit (ZT=S2 x sigma x T x kappa-1) exceeding 2, where T is the absolute temperature and kappa is the thermal conductivity. Here, we demonstrate that a high-density two-dimensional electron gas (2DEG) confined within a unit cell layer thickness in SrTiO(3) yields unusually large |S|, approximately five times larger than that of SrTiO(3) bulks, while maintaining a high sigma2DEG. In the best case, we observe |S|=850 microV K-1 and sigma2DEG=1.4 x 10(3) S cm-1. In addition, by using the kappa of bulk single-crystal SrTiO(3) at room temperature, we estimate ZT approximately 2.4 for the 2DEG, corresponding to ZT approximately 0.24 for a complete device having the 2DEG as the active region. The present approach using a 2DEG provides a new route to realize practical thermoelectric materials without the use of toxic heavy elements.

Organic semiconductors are attracting increasing interest as flexible thermoelectric materials owing to material abundance, easy processing and low thermal conductivity. Although progress in p-type polymers and composites has been reported, their n-type counterpart has fallen behind owing to difficulties in n-type doping of organic semiconductors. Here, we present an approach to synthesize n-type flexible thermoelectric materials through a facile electrochemical intercalation method, fabricating a hybrid superlattice of alternating inorganic TiS2 monolayers and organic cations. Electrons were externally injected into the inorganic layers and then stabilized by organic cations, providing n-type carriers for current and energy transport. An electrical conductivity of 790 S cm(-1) and a power factor of 0.45 mW m(-1) K(-2) were obtained for a hybrid superlattice of TiS2/[(hexylammonium)x(H2O)y(DMSO)z], with an in-plane lattice thermal conductivity of 0.12 ± 0.03 W m(-1) K(-1), which is two orders of magnitude smaller than the thermal conductivities of the single-layer and bulk TiS2. High power factor and low thermal conductivity contributed to a thermoelectric figure of merit, ZT, of 0.28 at 373 K, which might find application in wearable electronics.

Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, thermal conductivity, of heavily La- or Nb-doped SrTiO3 (STO) bulk single crystals were measured at high temperatures, (300–1050K) to clarify the influence of doping upon the thermoelectric performance of STO. The temperature dependence of Hall mobility and Seebeck coefficient changed at ∼750K in all samples because the dominant mechanism for carrier scattering changed with increasing temperature from coupled scattering by polar optical phonons and acoustic phonons to mere acoustic phonon scattering. The density-of-states effective mass of Nb-doped STO, which was estimated from the carrier concentration and Seebeck coefficient, was larger than that of La-doped STO. Thermal conductivity of the samples, which was similar to that of undoped STO single crystal, decreased proportionally to T−1, indicating that the phonon conduction takes place predominantly and the electronic contribution to thermal conductivity is negligible.

Thermoelectric power generation technology is now expected to help overcome global warming and climate change issues by recovering and converting waste heat into electricity, thus improving the total efficiency of energy utilization and suppressing the consumption of fossil fuels that are supposedly the major sources of CO2 emission. Thermoelectric oxides, composed of nontoxic, naturally abundant, light, and cheap elements, are expected to play a vital role in extensive applications for waste heat recovery in an air atmosphere. This review article summarizes our previous and ongoing studies on SrTiO3-based materials and further discusses nanostructuring approaches for both SrTiO3 and CaMnO3 materials. ZnMnGaO4 is taken as a model case for constructing a self-assembled nanostructure. The present status of thermoelectric oxide module development is also introduced and discussed.