Effect of Intermolecular Interaction of Compound Surfactant on Particle Removal in Post-Cu CMP Cleaning

Qu, Lijing; Gao, Baohong; Wang, Xuanshi; Wu, Tao; Tan, Baimei

doi:10.1149/2162-8777/ac08d2

Cited by 7 publications

(2 citation statements)

References 29 publications

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“…Similarly, Yang et al [15] observed the strong surface activity of two additives, AEO-9 and O-20, during the silicon wafer polishing process. Qu et al [16] discovered that the use of surfactants in the polishing solution aided in the elimination of abrasive particles from the surface of the wafer. Song et al [17] discovered that the nonionic surfactant polyethylene glycol improves the surface quality of wafers after polishing in wafer polishing.…”

Section: Introductionmentioning

confidence: 99%

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Jiang,

Guan,

Zhao

et al. 2024

Crystals

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The use of surfactants is crucial in the chemical–mechanical polishing fluid system for silicon wafers. This paper examines the impact of the functional group structure of polyoxyethylene-based nonionic surfactants and the variation in the polyoxyethylene (EO) addition number on the polishing performance of monocrystalline silicon wafers, to achieve the appropriate material removal rate and surface quality. The results demonstrated that the straight-chain structure of fatty alcohol polyoxyethylene ether (AEO-9) exhibited superior performance in wafer polishing compared to octylphenol polyoxyethylene ether (OP-9) and isoprenol polyoxyethylene ether (TPEG) and polyethylene glycol (PEG). By varying the number of EO additions of AEO-type surfactants, this study demonstrated that the polishing performance of monocrystalline silicon wafers was affected by the number of EO additions. The best polishing effect was achieved when the number of EO additions was nine. The mechanism of the role of polyoxyethylene-type nonionic surfactants in silicon wafer polishing was derived through polishing experiments, the contact angle, abrasive particle size analysis, zeta potential measurement, XPS, and other means of characterization.

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Section: Introductionmentioning

confidence: 99%

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Jiang,

Guan,

Zhao

et al. 2024

Crystals

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“…Xu et al 8 discovered that molecules of fatty alcohol polyoxyethylene ether (AEO) can effectively adsorb between abrasive particles and the polished wafer surface, forming an adsorption layer that protects the surface from chemical and mechanical erosion. Qu et al 9 found that surfactants encapsulate particles with hydrophobic groups and have hydrophilic groups on the outer layer, resembling a large micelle. This facilitates the removal of particles adsorbed on the wafer surface when they enter the solution.…”

mentioning

confidence: 99%

Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions

Yang,

Fang,

Sun

et al. 2024

ECS J. Solid State Sci. Technol.

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In the final polishing process of silicon, it is susceptible to alkaline anisotropic chemical etch and may have residual silicon sol on the surface, leading to an increase in the surface roughness of the wafer. To address this issue, this study investigates the mechanisms of how fatty alcohol polyoxyethylene ether AEO-9 and O-20 affect the surface roughness of silicon through systematic experimental measurements and theoretical calculations. The research results demonstrate that both AEO-9 and O-20 exhibit strong molecular activity and can adsorb on the silicon surface in a parallel manner, forming a protective film that effectively shields against corrosive particle erosion. Additionally, AEO-9 and O-20 can enhance the wetting of corrosive solutions on the silicon surface, resulting in more uniform chemical etch and reduced formation of etching pits. Furthermore, AEO-9 and O-20 can reduce the residual silicon sol on the silicon surface, thereby decreasing surface roughness. These findings shed new light on how AEO-9 and O-20 affect surface roughness on silicon, and suggest their potential use in the final polishing of silicon wafers.

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Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Zhao,

Wang,

Liu

et al. 2024

Adv Materials Inter

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As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of GaN is commonly one of the most effective ways to achieve atomically smooth surfaces. However, the current process is difficult to meet the needs of industrial development due to the characteristics of low material removal rate. Assisted enhanced CMP technique is deemed to possess significant potential due to its improved processing efficiency and surface topography quality. Herein, a variety of auxiliary enhanced CMP systems are designed and studied. In this review, recent advances both in conventional and assisted enhanced CMP of GaN are comprehensive presented, with a focus on their potential applications in various fields. The mechanism and design strategy of the process are discussed and summarized. The key issues in machining atomically flattened surface are outlined, and future strategies for sustainable development are also proposed. This review provides a novel perspective on GaN processing and offers more inspiration for future research to realize its development and commercial application.

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Effect of Intermolecular Interaction of Compound Surfactant on Particle Removal in Post-Cu CMP Cleaning

Cited by 7 publications

References 29 publications

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers

Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

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