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The effect of a non-ionic surfactant on particles removal in post-CMP cleaning was investigated. By changing the concentration of the non-ionic surfactant, a series of experiments were performed on the 12 inch Cu pattern wafers in order to determine the best cleaning results. Then the effect of the surfactant on the reduction of defects and the removal of particles was discussed in this paper. What is more, the negative effect of a non-ionic surfactant was also discussed. Based on the experiment results, it is concluded that the non-ionic surfactant could cause good and ill effects at different concentrations in the post-CMP cleaning process. This understanding will serve as a guide to how much surfactant should be added in order to achieve excellent cleaning performance.

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This paper presents a new cleaning process using boron-doped diamond (BDD) film anode electrochemical oxidation for metallic contaminants on polished silicon wafer surfaces. The BDD film anode electrochemical oxidation can efficiently prepare pyrophosphate peroxide, pyrophosphate peroxide can oxidize organic contaminants, and pyrophosphate peroxide is deoxidized into pyrophosphate. Pyrophosphate, a good complexing agent, can form a metal complex, which is a structure consisting of a copper ion, bonded to a surrounding array of two pyrophosphate anions. Three polished wafers were immersed in the 0.01 mol/L CuSO 4 solution for 2 h in order to make comparative experiments. The first one was cleaned by pyrophosphate peroxide, the second by RCA (Radio Corporation of America) cleaning, and the third by deionized (DI) water. The XPS measurement result shows that the metallic contaminants on wafers cleaned by the RCA method and by pyrophosphate peroxide is less than the XPS detection limits of 1 ppm. And the wafer's surface cleaned by pyrophosphate peroxide is more efficient in removing organic carbon residues than RCA cleaning. Therefore, BDD film anode electrochemical oxidation can be used for microelectronics cleaning, and it can effectively remove organic contaminants and metallic contaminants in one step. It also achieves energy saving and environmental protection.