Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2

Huang, Rui; Lin, Xuelian; Wen-Yong, Huang; Yao, Ruohe; Yu, Yunpeng; Lin, Kaifeng; Wei, Junhong; Zhu, Z. A.

doi:10.1016/j.tsf.2005.11.036

Cited by 10 publications

(8 citation statements)

References 25 publications

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“…Therefore, the excess atomic hydrogen generated by the Ar* hardly promotes the crystallization. Liu et al 26 and Huang et al 27 also found that the crystallization of film and thus the crystallinity of films is almost independent of the atomic hydrogen ${\rm H}^{\bullet} $ at higher substrate temperature. Then, the film structure is mainly determined by the bombardment of Ar + to the growing surface.…”

Section: Resultsmentioning

confidence: 98%

Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Lin

Gao

Xiao

et al. 2012

Physica Status Solidi (a)

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Hydrogenated nanocrystalline silicon films (nc‐Si:H) have been deposited by the decomposition of tetrachlorosilane (SiCl4) diluted with hydrogen (H2) and argon (Ar) by a plasma‐enhanced chemical vapor deposition (PECVD) method. Basing on the structural characterization of nc‐Si:H, we have found that Ar affects the growth of films deposited at two substrate temperatures (Ts = 250 and 120 °C) in different ways. At Ts = 250 °C, the Ar gas deteriorates the crystallinity of nc‐Si:H, whereas, at Ts = 120 °C, the crystallization of nc‐Si:H films is promoted with increasing argon flow rate (Hf) from 10 to 30 sccm; however, the extremely high Ar dilution adversely affects the ordered structure of films. Meanwhile, the hydrogen concentration in the films is also controlled by Hf. Finally, the effects of Ar in the SiCl4/H2/Ar system have been discussed in related to the equilibrium of atomic hydrogen and ionized argon.

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Section: Resultsmentioning

confidence: 98%

Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Lin

Gao

Xiao

et al. 2012

Physica Status Solidi (a)

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“…This promotes the growth of crystals as a result of the local heating or chemical annealing effects. The abstraction of HCl from the growing surface can improve the structural order of the silicon network [14] .…”

Section: Effect Of Hydrogen Volume Fractionmentioning

confidence: 99%

Polysilicon Prepared from SiCl₄by Atmospheric-Pressure Non-Thermal Plasma

Li¹,

Wang²,

Yang³

et al. 2011

Plasma Sci. Technol.

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Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current (8 kHz and 100 kHz) were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition

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“…Micro-Si films are chiefly produced by plasma enhanced chemical vapor deposition (PECVD) with diluted silane [1]. H 2 dilution is the most popular way because it is believed that atomic hydrogen can balance the dangling-bonding defect and hydrogen ions can etch the weak Si-Si bonds, so as to promote stability and crystallinity of the films [2,3]. However, H 2 dilution would limit the deposition rate seriously [4,5] and great amount of H existing in the film would draw back the photoelectric efficiency of poly-Si film due to acceptor-like defect formation and light-induced defect creation [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of Temperature on the Microstructure and Electrical Conductivity of Microcrystalline Si Films

Cheng

Wang

2017

MSF

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Micro-Si films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on microstructure and electrical conductivity of micro-Si film were investigated. The results show that, with the increasing of substrate temperature, crystallinity and grain size increased monotonously, of which a competing balance would determine the electrical conductivity of micro-Si films. Based on these results, relatively small grain size and appropriate crystallinity would be beneficial to improve the electrical properties of micro-Si films.

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Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2

Cited by 10 publications

References 25 publications

Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Polysilicon Prepared from SiCl₄by Atmospheric-Pressure Non-Thermal Plasma

Effect of Temperature on the Microstructure and Electrical Conductivity of Microcrystalline Si Films

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Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2

Cited by 10 publications

References 25 publications

Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Effect of argon on the structure of hydrogenated nanocrystalline silicon deposited from tetrachlorosilane/hydrogen/argon plasma

Polysilicon Prepared from SiCl4by Atmospheric-Pressure Non-Thermal Plasma

Effect of Temperature on the Microstructure and Electrical Conductivity of Microcrystalline Si Films

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Polysilicon Prepared from SiCl₄by Atmospheric-Pressure Non-Thermal Plasma