Polysilicon Prepared from SiCl₄by Atmospheric-Pressure Non-Thermal Plasma

Abstract

Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current (8 kHz and 100 kHz) were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition

Optical emission spectroscopy diagnostic and thermodynamic analysis of thermal plasma enhanced nanocrystalline silicon CVD process

“…Emission lines of reactive species including atomic silicon, atomic hydrogen and atomic argon are observed. Emission bands of excited fragments such as SiCl x (x ¼ 1, 2 or 3) observed in other SiCl 4 plasma decomposition processes [26][27][28] are not identied in this system. The amount of those fragments may be very small because of the sufficient ability of the ICP RF plasma to decompose precursors to produce atomic radicals.…”