Effect of Hydrogen on Silicon Nitrides Formation by Microwave Excited Plasma Enhanced Chemical Vapor Deposition

Abstract

The gas composition is one of the most important parameters for reducing process temperature of the plasma enhanced chemical vapor deposition. We investigate the effect of the gas flow rate of SiH4, H2, and N2 on the quality and the deposition rate of the silicon nitride films (SiNx) formed by the microwave excited PECVD. The SiH4 flow rate is most important parameter for controlling the deposition rate and the film quality in the PECVD using N2, H2, SiH4 gasses. The deposition rate strongly depends on the SiH4 flow rate; however the film quality was degraded with the increase of the flow rate. The hydrogen has an optimum flow rate for the high deposition rate and high quality film formation. The hydrogen effectively dissociates the SiH4 gas and makes the nitridation species (NHx), as the result, the optimal hydrogen improves the reaction efficiency of SiH4 and NHx.

A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics

“…Table I shows the deposition conditions of SiN dielectric films in the additional process in order to form the DUTs and the fabricated samples. In order to deposit high-quality SiN films at low temperature, the plasma-enhanced CVD (PECVD) [40][41][42] was used and we fabricated MIM capacitors. SiN films were deposited under two different conditions by changing the deposition time.…”

Threshold voltage uniformity improvement by introducing charge injection tuning for low-temperature poly-Si thin film transistors with metal/oxide/nitride/oxide/silicon structure

“…An activation anneal (550 °C, 1 h) was carried out in N 2 ambient after removal of the resist by O 2 plasma ashing. To form the oxide/nitride/oxide (ONO) stack, tunnel oxide (5 nm) was formed by direct oxidation of LTPS film using Kr/O 2 plasma [23][24][25] at 350 °C; this was followed by deposition of a SiN CTL (30 nm) and a blocking SiO 2 layer (20 nm) using microwave-excited plasma-enhanced CVD (PECVD) 23,[26][27][28][29] at 350 °C. In PECVD, SiH 4 and N 2 were used as precursors for SiN film deposition, and SiH 4 and O 2 were used for SiO 2 film deposition.…”

Evaluation of Silicon Nitride Film Formed Using Magnetic-Mirror Confined Plasma Source

“…This condition was optimized to obtain the ideal stoichiometric SiN film with the ideal refractive index. 3 Because the conventional PECVD chamber was the deposition system for 8-inch wafer, the chamber volume was significantly larger compared to that of the MPECVD system. As a result, the absolute value of total gas flow rate was also quite larger in the conventional case than the case of the MPECVD system.…”