Effect of hot-wire passivation on the properties of hydrogenated microcrystalline silicon films to reduce post-deposition oxidation

N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films

“…We reported previously that hydrogenated microcrystalline silicon (µc-Si:H) thin film was treated in CH 4 atmosphere right after the deposition and that the post-deposition treatment prevented postoxidation of the films [10]. This study also gave us the information of CH 4 decomposition on a hot wire.…”

“…The substrate-holder surface temperature (T ss ) was 300°C. The µc-Si:H films prepared under this condition have a high defect density [10,11]. Right after the deposition, the post-deposition treatment was carried out in the atmospheres of the N 2 , N 2 /H 2 , or H 2 .…”