Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances

Tabata, Akimori; Komura, Yoshiaki

doi:10.1016/j.surfcoat.2007.04.100

Cited by 25 publications

(9 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the decomposition of the SiH 4 and CH 4 are at different filament temperatures, the SiH 4 starts to decompose at 1027 °C and the decomposition rate increases at temperatures above 1427 °C [18]. However, moderate decomposition of CH 4 only occurs at 1750 °C and above [19, 20]. Therefore, HWCVD utilizes the growth of Si-based nanostructures with different morphologies and compositions by tuning the decomposition rate of the source gases by varying the hot filament temperature.…”

Section: Introductionmentioning

confidence: 99%

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

2015

View full text Add to dashboard Cite

Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature Tf from 1150 to 1850 °C. At a Tf of 1450 °C, the heterostructure nanowires were formed by crystalline NiSi and crystalline Si that were attributed to the core and shell of the nanowires, respectively. The morphology of the nanowires showed significant changes with the increase in the filament temperature to 1850 °C. Moreover, the effect of hydrogen heat transfer from the filament temperature demonstrated significant phase changes from NiSi to Ni2Si with increase in the filament temperature. The increased filament temperature also enhanced reactions in the gas phase thus generating more SiC clusters and consequently formed the NiSi/SiC heterostructure core-shell nanowires at Tf of 1850 °C. This paper discusses the role of filament temperatures on the growth and constituted phase change of the nanowires as well as their electrical characteristics.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0980-6) contains supplementary material, which is available to authorized users.

show abstract

Section: Introductionmentioning

confidence: 99%

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

2015

View full text Add to dashboard Cite

show abstract

“…Using HWCVD, high-quality amorphous and microcrystalline silicon materials (a-Si:H and μc-Si:H) and related high-performance solar cells and thin film transistors have been fabricated [2][3][4][5][6]. Besides silicon, HWCVD technique also shows its superiority in depositing stoichiometric microcrystalline silicon carbide (μc-SiC:H) material with mainly cubic SiC polytype at low substrate temperatures [7][8][9][10][11]. Such wide band-gap μc-SiC:H material is an outstanding window layer for solar cells, such as silicon thin film solar cells [12,13] and silicon heterojunction solar cells [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Dual hot-wire arrangement for the deposition of silicon and silicon carbide thin films

et al. 2015

View full text Add to dashboard Cite

“…The PE-CVD technique has an integration advantage in the device fabrication with the current technologies employed in semiconductor industries but this technique has the problem of ion damage on the growing surface and interfaces because of use of high power density, low deposition rate due to use of high hydrogen dilution and low carbon incorporation efficiency. In recent years, hot wire chemical vapor deposition (HW-CVD) technique has emerged as a promising technique to deposit such films at relatively low substrate temperature [18][19][20][21][22]. The two major advantages of employing HW-CVD method for the synthesis of SiC coatings are the absence of the deleterious electrons and ions and surface charges which avoid of powder formation and second is high dissociation rate of source gases which leads to higher deposition rate.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of nanocrystalline silicon carbide thin films by HW-CVD using ethane carbon precursor for photo detector application

Pawbake

Waman

Waykar

et al. 2015

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)

View full text Add to dashboard Cite

Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films were prepared by hot wire chemical vapor deposition (HW-CVD) method using ethane (C 2 H 6 ) as a carbon precursor. The influence of deposition pressure on structural and optical properties was investigated. The formation of nc-SiC:H films was confirmed by low angle x-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy analysis. An inverse relation between deposition pressure and deposition rate was observed. Optical band gap values, E Tauc and E 04 increases with increase in deposition pressure. In fact, optical band gap values estimated from E 04 method was found higher than the E Tauc values calculated fromTauc's plot. Finally, at optimized deposition pressure (450 mTorr), a photo detector having configuration glass/nc-SiC:H/Al have been fabricated and its photo response was studied. Further study is required to improve the quality of nc-SiC:H films to make use in photo detectors.

show abstract

Preparation of nanocrystalline cubic silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances

Cited by 25 publications

References 24 publications

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties

Dual hot-wire arrangement for the deposition of silicon and silicon carbide thin films

Synthesis of nanocrystalline silicon carbide thin films by HW-CVD using ethane carbon precursor for photo detector application

Contact Info

Product

Resources

About