Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates

Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution

“…12 However, from the viewpoint of cost reduction and practical application, employing SiH 4 /CH 4 gas mixture without H 2 could be advantageous because hydrogen dilution tends to reduce the deposition rate of the films. [22][23][24] To date, there are no reported works on the deposition of nanocrystalline-3C-SiC (nc-3C-SiC) film by the HWCVD technique using only SiH 4 and CH 4 . This motivates us to investigate the growth of nanocrystalline SiC at low temperature by HWCVD technique from SiH 4 /CH 4 gas mixture without hydrogen dilution.…”