Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition

Paneerselvam, Emmanuel; Narayanan, V.; Vasa, Nilesh J.; Higashihata, Mitsuhiro; Nakamura, Daisuke; Ikenoue, Hiroshi; Rao, M. S. Ramachandra

doi:10.1007/s11664-019-07097-7

Cited by 12 publications

(8 citation statements)

References 62 publications

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“…Therefore, to reduce the processing temperature, a change of the reaction pathway is necessary. PLD has been used to deposit a wide range of compounds including oxides, nitrides and carbides [35][36][37]. PLD is also known to be able to keep the stoichiometry of the target material under optimal conditions [38].…”

Section: Resultsmentioning

confidence: 99%

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Wei

Zheng

et al. 2021

Nano Energy

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Section: Resultsmentioning

confidence: 99%

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Wei

Zheng

et al. 2021

Nano Energy

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“…Similarly, phosphorous doping was carried out in a phosphoric solution (85% H 3 PO 4 ) to obtain n-type SiC thin film. The level of doping solutions was maintained 2 mm above the SiC thin film to avoid splashing 11, 12 . Lateral (side-by-side) p–n SiC diode formation was demonstrated, as presented schematically in Figure 1(c).…”

Section: Methodsmentioning

confidence: 99%

Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films

Paneerselvam

Choutapalli

Kumar

et al. 2021

Journal of Micromanufacturing

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Laser-assisted doping of intrinsic silicon carbide (SiC) films deposited on Si (100) substrates by pulsed laser deposition (PLD) method and its influence on simultaneous annealing of the thin film is studied. PLD grown intrinsic SiC films are transformed to p-type SiC and n-type SiC, using laser-assisted doping in aqueous aluminum chloride and phosphoric solutions, respectively. Simultaneous doping and annealing of the SiC film are observed during laser-assisted doping. By precisely positioning the selectively doped region, lateral p–n diodes are formed on the SiC films without using any mask. Electric characteristics confirmed the formation of a lateral p–n diode structure. Numerical analysis of temperature distribution along the depth of the SiC films explains the mechanism of simultaneous doping and annealing during the laser treatment.

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“…Among the polytypes, 4H-SiC(0001) has received the most attention due to its second-highest bandgap (3.2 eV) and isotropic mobility along the crystal a - and c -axes . 4H-SiC(0001) is commercially available in a wafer form. − Nitrogen (N) and phosphorus (P) are used as n-type dopants, whereas aluminum (Al) and boron (B) are used in the case of p-type 4H-SiC. , …”

Section: Introductionmentioning

confidence: 99%

“…3 3C-SiC can be used for solar cells, piezoresistive devices, and optoelectronic devices. 5 4H-SiC and 6H-SiC are used in metal-oxide-semiconductor field-effect transistors and high-efficiency photodiodes, respectively. Among the polytypes, 4H-SiC(0001) has received the most attention due to its second-highest bandgap (3.2 eV) and isotropic mobility along the crystal a-and c-axes.…”

Section: Introductionmentioning

confidence: 99%

“…Silicon carbide (SiC), a wide bandgap semiconductor with an indirect band structure, is attractive as a semiconductor for its excellent physical and electronic properties. − SiC exhibits a large band gap (2.3 to 3.2 eV), high temperature coefficient, high critical field strength (4–6 MV cm –1 ), and high chemical stability. − SiC-based devices show high breakdown voltage, high switching speed, and high-temperature operation. ,, …”

Section: Introductionmentioning

confidence: 99%

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X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

Tsai

Tang

Yamashita

2023

ACS Appl. Electron. Mater.

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The atomic structures and chemical states of active and inactive dopant sites in n-type and p-type 4H-SiC(0001) substrates have been investigated by X-ray absorption near edge structure (XANES) and photoelectron spectroscopy (PES). In N atom-doped n-type 4H-SiC(0001), the PES results indicated that a N− C species was formed near the surface. XANES simulations showed that SiNx and N−C species were attributed to active and inactive dopant states, respectively. Angle-resolved XANES measurements showed that the N−C species acted as an inactive dopant site in N-doped 4H-SiC(0001). In Al-doped p-type 4H-SiC, PES analysis revealed that a single chemical state was present at the Al-doped 4H-SiC. The simulated XANES spectra showed that the Si site in 4H-SiC(0001) was replaced by an Al dopant atom, which was the active dopant site. Furthermore, relaxation of the local structure around the Al dopant in Al-doped 4H-SiC(0001) was observed due to bond stretching.

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Laser Assisted Doping of Silicon Carbide Thin Films Grown by Pulsed Laser Deposition

Cited by 12 publications

References 62 publications

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films

X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

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