Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films

Abstract

Laser-assisted doping of intrinsic silicon carbide (SiC) films deposited on Si (100) substrates by pulsed laser deposition (PLD) method and its influence on simultaneous annealing of the thin film is studied. PLD grown intrinsic SiC films are transformed to p-type SiC and n-type SiC, using laser-assisted doping in aqueous aluminum chloride and phosphoric solutions, respectively. Simultaneous doping and annealing of the SiC film are observed during laser-assisted doping. By precisely positioning the selectively doped region, lateral p–n diodes are formed on the SiC films without using any mask. Electric characteristics confirmed the formation of a lateral p–n diode structure. Numerical analysis of temperature distribution along the depth of the SiC films explains the mechanism of simultaneous doping and annealing during the laser treatment.

Defect Inspection Techniques in SiC

“…Femtosecond laser annealing can also improve the quality of ohmic contact between Ni and SiC and increase the conductivity of the device [ 134 ]. In addition to the application of femtosecond lasers, some other teams also found that the use of laser-induced liquid phase doping (LILPD) can effectively reduce the damage generated during the process [ 135 ].…”