Effect of high Xe-concentration in a plasma display panel with a SrCaO cold cathode

Abstract

We present here measurements of high Xe-contents plasma display panel (PDP) with SrCaO cold cathode. Luminous efficacy (η) shows a two-step increase with Xe-concentration in Ne/Xe gas mixture: η drastically increases up to Xe-concentration of 30% (Xe: 30%), and then attains 5 lm/W at the highest Xe-concentration of Xe: 100%. The high performance PDP with Xe: 100% can be operated at low applied voltage between 230 and 377 V due to the high secondary electron emission from the SrCaO cathode. Emission measurements clearly show the change in discharge characteristics at Xe: 30%, where the discharge changes from a Ne/Xe mixture discharge to an almost pure Xe discharge, and the vacuum ultraviolet (VUV) radiation from the combination of resonance and excimer radiations to only excimer radiation. Theoretical analysis solving Boltzmann equation for electron demonstrates that increasing Xe-concentration enhances the collision frequency for electron impact excitation directly from ground state to lower levels concerned with the VUV radiation, resulting in a drastic increase in luminous efficacy up to Xe: 30%. Also, one-dimensional fluid simulation of a Ne/Xe dielectric barrier discharge clearly shows that a combination of high secondary electron emission cathode and high Xe-concentration is quite effective for high VUV radiation efficiency because it induces a drastic increase in electron-heating efficiency.

A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

“…[4][5][6][7] However, the supply voltage should be increased to improve the luminous efficacy of PDPs with a higher Xe concentration in discharge gas, leading to a larger device area and a higher cost. [8] So many efforts have been widely made to develop LIGBTs of small size, low cost, and high reliability. Trench gate technology was first introduced to IGBTs (LTIGBTs) to reduce the saturation voltage drops of the planar structures, [9][10][11] which was invented for the higher integration due to smaller cell pitches.…”

Effects of Surface and Plate-Gap Discharges on Panel-Aging Characteristics in Alternating-Current Plasma Display Panel

“…16) Several efforts to reduce panel-aging process time have been reported, such as the use of driving waveforms, plasma pretreatment, and a vacuum sealing process. [17][18][19] However, the correlations between the surface and plate-gap discharge mode and the discharge and surface characteristics of the MgO layer in the display cell during the panel-aging process are still not well known.…”

Discharge diagnosis of high Xe concentration and high‐γ protective layer in PDPs

“…Consequently, the combination of a high Xe concentration and a high-γ protective layer is very necessary. 2 In this paper, the panels which use a low-and high-γ protective layer with different Xe concentrations have been analyzed. To show the advantages, the performance of MgO and SrCaO panels with 4% and 20% Xe concentration, respectively, have been compared.…”