A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate

Abstract

In this paper, a novel dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure, which features a double extended trench gate and a dielectric inserted in the drift region, is proposed and discussed. The device can not only decrease the specific on-resistance R on,sp , but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A•cm −2 with a small half-cell pitch of 10.5 µm, a specific on-resistance R on,sp of 187 mΩ•mm 2 , and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.

Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

“…[1][2][3][4][5][6][7] However, it is well known that LIGBT suffers high turnoff loss (E off ) and slow switching owing to the removal of the large number of carriers stored in the drift region during the turnoff process. To alleviate this problem, various LIGBT structures [8][9][10][11][12][13][14][15][16] have been proposed, such as shorted anode LIGBT, [8] segmented anode NPN controlled LIGBT, [9,10] and gradual hole injection dualgate LIGBT. [11] Besides, increasing the carrier density at the cathode side of the n-drift region in the on-state is an effective solution to achieve a low E off .…”