Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

He, Yi; Qiao, Ming; Zhang, Bo

doi:10.1088/1674-1056/25/12/127304

Cited by 4 publications

(3 citation statements)

References 20 publications

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“…Lateral Insulated Gate Bipolar Transistor (LIGBT) is a promising power device, which is widely applied in High Voltage ICs (HVIC) [1][2][3][4]. Here, the tradeoff relationship between forward voltage drop (Von) and turn-off loss (Eoff) limits the development of LIGBTs [5][6][7][8][9]. To address this issue, the shorted anode (SA) LIGBT is proposed to reduce the Eoff by providing an additional electron extraction path of the N+ anode [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

Chen

Huang

et al. 2024

IEEE J. Electron Devices Soc.

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A novel snapback-free and fast-switching Shorted-Anode Lateral Insulated Gate Transistor (SA LIGBT) with Multiple Current P-Plugs (MCP) in anode, named MCP LIGBT, is proposed and investigated. The device features Multiple separated Current P-Plugs which are inserted in the N-buffer. At the forward conduction mode, the MCP act as the potential barrier to block the electrons flowing directly to the N+ anode, and the N-channels sandwiched between the MCP are fully depleted, which both increase the anode distributed resistance (RSA). In the turn off process, the N-channels provide three high-speed paths for minorities extraction, which reduces the turn off time. Consequently, the proposed device not only eliminates the snapback effect, but also achieves superior tradeoff between Eoff and Von. At the same

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Section: Introductionmentioning

confidence: 99%

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

Chen

Huang

et al. 2024

IEEE J. Electron Devices Soc.

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“…[1][2][3][4][5][6][7][8][9] However, the excessive carriers in the N-drift lead to the large turn-off loss E off . [10][11][12][13][14][15][16][17] The shorted anode (SA) LIGBT can effectively accelerate the extraction of electrons by introducing the N+ anode in anode. [18] However, the snapback effect is induced when the working mode of the device transforms from unipolar mode to bipolar mode.…”

Section: Introductionmentioning

confidence: 99%

Snapback-free shorted anode LIGBT with controlled anode barrier and resistance*

Li¹,

Zhang²,

Chen³

et al. 2021

Chinese Phys. B

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A novel shorted anode lateral-insulated gate bipolar transistor (SA LIGBT) with snapback-free characteristic is proposed and investigated. The device features a controlled barrier V barrier and resistance R SA in anode, named CBR LIGBT. The electron barrier is formed by the P-float/N-buffer junction, while the anode resistance includes the polysilicon layer and N-float. At forward conduction stage, the V barrier and R SA can be increased by adjusting the doping of the P-float and polysilicon layer, respectively, which can suppress the unipolar mode to eliminate the snapback. At turn-off stage, the low-resistance extraction path (N-buffer/P-float/polysilicon layer/N-float) can quickly extract the electrons in the N-drift, which can effectively accelerate the turn-off speed of the device. The simulation results show that at the same V on of 1.3 V, the E off of the CBR LIGBT is reduced by 85%, 73%, and 59.6% compared with the SSA LIGBT, conventional LIGBT, and TSA LIGBT, respectively. Additionally, at the same E off of 1.5 mJ/cm2, the CBR LIGBT achieves the lowest V on of 1.1 V compared with the other LIGBTs.

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“…Lateral insulated bipolar transistor (LIGBT) is widely applied in smart power integrated systems due to its low power consumption and voltage control advantages [1–3]. However, the high barrier of the anode forces the carriers to be removed only by recombination, which will increase the turn‐off time of LIGBTs [4–9].…”

Section: Introductionmentioning

confidence: 99%