Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors

Park, Jun-Ik; Jeong, Hyun-Seok; Vincent, Premkumar; Park, Ji-Hwan; Kim, Do Kyung; Jang, Jaewon; Kang, In Man; Kim, Hyeok; Kim, Yun‐Hi; Lang, Philippe; Bae, Jin‐Hyuk

doi:10.1166/jnn.2020.17615

Cited by 4 publications

(5 citation statements)

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“…The field-effect mobility in the saturation region was obtained using a well-known relationship previously reported elsewhere. 37,38 As compared in Fig. 3e, the SAM treatment on the electrodes results in an increase of average mobilities of the devices for both electrons (from 0.21 cm 2 V À1 s À1 to 0.44 cm 2 V À1 s À1 ) and holes (from 0.06 cm 2 V À1 s À1 to 0.29 cm 2 V À1 s À1 ).…”

Section: Resultsmentioning

confidence: 81%

Solution-processed ambipolar organic thin-film transistors and inverters in a single substrate through self-assembled monolayer-treated electrodes

Kim¹,

Biswas²,

Song³

et al. 2023

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 81%

Solution-processed ambipolar organic thin-film transistors and inverters in a single substrate through self-assembled monolayer-treated electrodes

Kim¹,

Biswas²,

Song³

et al. 2023

J. Mater. Chem. C

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“…Figure a–d shows the variation of

\sqrt{I_{normalD}}

with V G (at different V D values) of the FETs having 29‐DPP‐SVS layer coated at 0.6, 2, 4, and 6 mm s −1 , respectively. It is well‐known that the field‐effect charge carrier mobility ( μ sat ) at the saturation region of an FET can be estimated from the slope of

\sqrt{I_{normalD}}

versus the V G curve using the Equation () [ 26 ]

μ_{sat} = \frac{2 L}{W C} {(\frac{\partial \sqrt{I_{D}_{sat}}}{\partial_{normalG}})}^{2}

…”

Section: Resultsmentioning

confidence: 99%

“…[ 29,30 ] Here, the thickness of semiconductor layer was 25.8, 35.7, 51.5, and 73.3 nm at the BC speed of 0.6, 2, 4, and 6 mm s −1 , respectively. [ 26 ] So, at the lowest coating speed (i.e., 0.6 mm s −1 ), the thickness of the semiconductor layer was sufficiently thin, and the conducting channel was located in the vicinity of the gate insulator interface. Therefore, the effect of the trap state (formed at the interface of semiconductor and dielectric layer) on the charge carrier mechanism was higher, which resulted in a lower charge carrier mobility value at an extremely low coating speed.…”

Section: Resultsmentioning

confidence: 99%

Effect of Source–Drain Electric Field on Charge Transport Mechanism in Polymer‐Based Thin‐Film Transistors

Biswas

Seo

Lee

et al. 2021

Physica Status Solidi (a)

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Donor–acceptor copolymer‐based field‐effect transistors (FETs) have attracted considerable attention from technological and academic perspectives due to their low band gap, high mobility, low cost, and easy solution processability, flexibility, and stretch ability. Among different solution‐processing techniques, meniscus‐guided coating has the potential for large‐area film formation. Moreover, 29‐diketopyrrolopyrroleselenophene vinylene selenophene (29‐DPP‐SVS) donor‐acceptor copolymer‐based FETs have already exhibited excellent performance due to their short π–π stacking distance and strong π–π interaction. Charge carrier mobility of these types of semiconducting materials is significantly dependent on the applied electric field. Therefore, detailed analysis of the electric‐field dependency of charge carrier mobility is necessary to understand the transport mechanisms within these materials. Thus, herein, 29‐DPP‐SVS‐based FETs are fabricated by varying the blade‐coating speed of their semiconductor layer. Then, the effect of the blade‐coating speed on the electrical properties of the FETs is studied through the analysis of electric‐field‐dependent mobility. The results suggest that the charge carrier mobility of different FETs is dependent on the applied electric field and that the type of dependency is Poole–Frenkel. At an optimized blade‐coating speed (2 mm s−1), the device exhibits maximum zero‐field mobility (3.39 cm2 V−1 s−1) due to the low trap density within the conducting channel.

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“…For most polymer semiconductors, [ 85 ] the high molecular orientation is more beneficial to the improvement of performance than the high crystallinity, and the viscosity of the polymer solution is usually higher. [ 86 ] Therefore, polymers tend to be coated faster than small molecular semiconductors, as evidenced by the data in Tables 1 and 2 .…”

Section: Classification and Relevant Mechanisms Of Mgcsmentioning

confidence: 99%

Meniscus‐Guided Deposition of Organic Semiconductor Thin Films: Materials, Mechanism, and Application in Organic Field‐Effect Transistors

Ren

Cao

2023

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as well as their application in organic optoelectronic devices, such as organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs), organic photovoltaics (OPVs), and other devices. [3][4][5][6][7][8][9][10][11] OFET is one of the basic devices to characterize electrical properties of OSCs and also has wide applications as the core component of organic electronic products, such as organic sensors, organic electronic circuits, wearable electronic devices, and so on. [12] Over these years, the performance of OSCs and their OFETs has been continuously improved, with the high carrier mobilities of transistors (µ) > 1-10 cm 2 V −1 s −1 . [13] In addition to optimizing the molecular structures and characteristics of OSCs (typically main-chain engineering and side-chain engineering), [14][15][16] another key factor in developing high-performance semiconductors and transistors is the processing technology. [17] It is well known that the electrical properties of OSCs not only depend on the molecular structures, but also are closely on the aggregation structures of the semiconductor thin films, resulting in two carrier transport modes: intramolecular band transport and intermolecular hopping transport. The carrier mobilities of the same OSC with different aggregated structures may differ by 10 or even 100 times, because the microstructure and the morphology of OSC films are influenced by many factors, such as intermolecular interaction, external forces, annealing, molecular self-assembly, and so on. [18][19][20] The common processing technologies of OSC thin films are mainly vacuum vapor deposition and solution processing. Vacuum deposition is only suitable for some small molecule semiconductors, and requires large equipments and high temperatures. So far, a great variety of solution processing methods [21] have been adopted to deposit semiconductor thin films, and spin coating is the most commonly used method in the laboratory. The process of spin coating is simple and suitable for small-area, but hard to prepare large-area uniform films, and more than 95% of the materials are wasted. [22] In addition, the orientation degree of the thin films prepared by spin coating is not high, and it is easier to form small-size spherulite crystals. Finally, the shear stress distribution is uneven during the spin-coating process, which makes it difficult to control the film morphology. [7] Solution-processable organic semiconductors are one of the promising materials for the next generation of organic electronic products, which call for high-performance materials and mature processing technologies. Among many solution processing methods, meniscus-guided coating (MGC) techniques have the advantages of large-area, low-cost, adjustable film aggregation, and good compatibility with the roll-to-roll process, showing good research results in the preparation of high-performance organic fieldeffect transistors. In this review, the types of MGC techniques are first listed and the relevant mechanisms (wetting mechanism, fluid...

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Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors

Cited by 4 publications

References 0 publications

Solution-processed ambipolar organic thin-film transistors and inverters in a single substrate through self-assembled monolayer-treated electrodes

Solution-processed ambipolar organic thin-film transistors and inverters in a single substrate through self-assembled monolayer-treated electrodes

Effect of Source–Drain Electric Field on Charge Transport Mechanism in Polymer‐Based Thin‐Film Transistors

Meniscus‐Guided Deposition of Organic Semiconductor Thin Films: Materials, Mechanism, and Application in Organic Field‐Effect Transistors

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