Effect of HgCdTe–passivant interface properties on the responsivity performance of photoconductive detectors

Noise modeling of shunt resistance in HgCdTe photoconductor detectors

“…This was investigated in detail in Refs. [15,16]. That is why we get peaked behavior in responsivity measurements of gated PC devices as was experimentally observed by Siliquini et al [15] and Pal et al [16].…”

“…(16) and (17), v is the bias voltage, g the quantum efficiency, L the half of detector length ( Fig. 1), Df the bandwidth, p 0 the equilibrium hole density, b is electron to hole mobility ratio, hP B i is spatial average (over entire length of detector) of background generated hole density and hð0Þ is the effective bulk lifetime including the effect of recombination at ohmic contacts.…”

“…Detailed results on dependence of lifetime on surface conditions such as Q ss , n ss and SRV are given in Ref. [14][15][16][17]. Hence for intermediate values of u s from 20 to 50 mV there is trade-off between increasing effective lifetime and increasing n 0s which effect shunt noise in opposite directions and hence a peak near 45 mV.…”

“…Additionally, Q ss is computed using results of standard one-dimensional model of MIS theory [13][14][15][16] …”

A CdTe passivation process for long wavelength infrared HgCdTe photo-detectors

“…Theoretical fitting of the measured responsivity is obtained using our responsivity model published earlier. 23 A good fit is obtained for the values of Q f ϭ 8 ϫ 10 10 cm Ϫ2 and s ϭ 250 cm s Ϫ1 in the case of CdTe-passivated photoconductor. Respective values of these parameters are obtained to be 2 ϫ 10 12 cm Ϫ2 and 1000 cm s Ϫ1 in the case of AO-passivated photoconductor.…”