Effect of H2 dilution gas on the growth of ZrC during low pressure chemical vapor deposition in the ZrCl4–CH4–Ar system

Calculation and synthesis of ZrC by CVD from ZrCl4–C3H6–H2–Ar system with high H2 percentage

“…Based on the instruction of calculation and previous experiments [17,18,24], synthesis experiments were designed to explore the influence of parameters such as temperatures, gases flux on the ZrC coating synthesis process.…”

“…Several studies reported the CVD of zirconium carbide and carbon-zirconium carbide alloys [10][11][12][13][14][15][16][17][18]. The ZrC coatings are generally synthesized by zirconium halide [11,12] and hydrocarbons, such as CH 4 and C 3 H 6 [14,15].…”

“…The effects of synthesis parameters such as deposition temperature [16,17], H 2 flux [18] on the final products have been systematically studied. In general, ZrC with stoichiometry can be deposited at relative low temperatures by using C 3 H 6 rather than CH 4 because C 3 H 6 is easier to decompose than CH 4 [19].…”

Carburizing of zirconium using a low energy Mather type plasma focus

“…The bombardment of energetic carbon ions transfers enough energy to zirconium surface that initiate the ZrC compound formation. The presence of hydrogen may also play its role in growing of ZrC as hydrogen act as reactant and facilitates the nucleation of ZrC phase [43]. The appearance of irregular pores may be due to irradiation of energetic ions followed by successive focus shots.…”

Effects of ZrC coating on mechanical properties of PIP-C/SiC composites

“…Due to its high melting point (3530°C), high Young's modulus, high chemical stability and low vapor pressure, ZrC became the optimal option for protective coating at the supersonic environment [17]. Meantime, thin protective ZrC layers had been formed on the surface of C/SiC composites by chemical vapor deposition (CVD) [18].…”