2011
DOI: 10.1016/j.surfcoat.2010.11.015
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Carburizing of zirconium using a low energy Mather type plasma focus

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Cited by 33 publications
(16 citation statements)
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References 46 publications
(52 reference statements)
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“…GPa [10,44,45], this difference comes from the difference in microstructure between bulk zirconium characterized by large grains and the film consists of nanometer-sized grains in agreement with Hall-Petch relationship. During the growth, the zirconium film undergoes a particles bombardment, which contributes to the increase of the stress state and subsequently the film hardness.…”
Section: Surface Mechanical Propertiessupporting
confidence: 56%
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“…GPa [10,44,45], this difference comes from the difference in microstructure between bulk zirconium characterized by large grains and the film consists of nanometer-sized grains in agreement with Hall-Petch relationship. During the growth, the zirconium film undergoes a particles bombardment, which contributes to the increase of the stress state and subsequently the film hardness.…”
Section: Surface Mechanical Propertiessupporting
confidence: 56%
“…Zirconium is widely employed in industrial devices being used in aerospace, optoelectronics, and chemistry [9]. Its high melting point and low thermal neutrons capture cross section allows it to be used in nuclear reactor installations [8,10]. Zirconium is applied as an alloy or ceramic in medical implants because it is biocompatible in the human body [11].…”
Section: Introductionmentioning
confidence: 99%
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“…4). Moreover, it is assumed that highly energetic ion flux generated by stable and strong focusing action deliver an excessive energy to the substrate surface causes sputtering and etching and hence results in surface damages such as holes, pores and pits [42,43]. Using the images taken by an Atomic Force Microscope (AFM), we have studied the surface morphology of the films deposited with various focus shots numbers at 0°a ngular position.…”
Section: Resultsmentioning
confidence: 99%
“…The dense plasma focus (DPF) is an unconventional plasma device which is well known as a simple pulsed plasma device; a source for X-rays, neutrons, relativistic electrons and energetic ion beams production [29]. Because of wide ranged multiple phenomenon source, the device has found several applications in a number of fields, such as: thin film deposition [30], ion implantation [31], surface modification [32], thermal surface treatment [33] and number of other applications. In the presently reported research, this deposition technique has been employed for the first time for synthesis of TaN film.…”
Section: Introductionmentioning
confidence: 99%