Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

Caban, P.; Strupiński, Włodek; Szmidt, J.; Wójcik, M.; Gaca, J.; Kelekçi, Özgür; Çalışkan, Deniz; Özbay, Ekmel

doi:10.1016/j.jcrysgro.2010.09.058

Cited by 9 publications

(5 citation statements)

References 10 publications

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“…Indeed, for a thickness t GaN of 410 nm (see Figure a), the morphology is characterized by uncoalesced microcrystals anywhere on the Si profile. With an increase in the amount of deposited GaN, they start to coalesce at t GaN = 1.0 μm (not shown here), and finally, for t GaN > 3 μm (see Figure d), they form compact and smooth layers on the Si {1 1 1} facets.…”

Section: Results and Discussionmentioning

confidence: 85%

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Isa

Chèze

Siekacz

et al. 2015

Crystal Growth & Design

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We present an innovative approach to integrate arrays of isolated, strainfree GaN crystals on patterned Si substrates. First, micrometer-sized pillars are patterned onto Si(0 0 1) substrates. Subsequently, 2.5 μm Si substrates are deposited by low-energy plasma-enhanced chemical vapor deposition, forming crystals mostly bounded by {1 1 1}, {1 1 3}, and {15 3 23} facets. Plasma-assisted molecular beam epitaxy is then used for GaN deposition. GaN crystals with slanted {0 0 0 1} facets having a root-mean-square surface roughness of 0.7 nm are obtained for a deposited material thickness of >3 μm. Microphotoluminescence measurements performed at room and cryogenic temperature show no yellow luminescence and a neutral donorbound A exciton transition at 3.471 eV (10 K) with a full width at half-maximum of 10 meV. Microphotoluminescence and micro-Raman spectra reveal that GaN grown on Si pillars is strain-free. Our results indicate that the shape of GaN crystals can be tuned by the pattern periodicity and that a reduction of threading dislocations is achieved in their top part.

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Section: Results and Discussionmentioning

confidence: 85%

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Isa

Chèze

Siekacz

et al. 2015

Crystal Growth & Design

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“… and the crystal of best quality was obtained for the process at a pressure of 200 mbar. Additionally AFM, X‐Ray and microwave characterization of the GaN plates exhibited the best surface roughness and the highest breakdown in voltage for product obtained at 200Mbar (Table ) .The simulations show that the process at 50mbar exhibits the fastest growth rate, however it produces the least homogeneous product. Calculations indicate, that the most homogeneous crystal layer is obtained at a pressure of 200 mbar.…”

Section: Resultsmentioning

confidence: 99%

“…The modeling results were verified using experimental data for the influence of process pressure on the crystal growth as described in .…”

Section: Numerical Modelmentioning

confidence: 99%

“…Epitaxial growth is a widely used method for manufacturing semiconductors, due to the fact that the epitaxial layer can be created as a single crystal, without grain boundaries and other defects, it produces crystals of the highest quality . The thickness homogeneity of epitaxial layers of semiconductors determines quality of electronic devices.…”

Section: Introductionmentioning

confidence: 99%

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Numerical design of Metal‐Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth

Skibiński

Caban

Wejrzanowski

et al. 2016

Crystal Research and Technology

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The paper presents the results of numerical simulations and experimental measurements of the epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy within a AIX-200/4RF-S reactor. The aim was to develop optimal process conditions for obtaining the most homogeneous crystal layer. Since there are many factors influencing the chemical reactions on the crystal growth area such as: temperature, pressure, gas composition or reactor geometry, it is difficult to design an optimal process. In this study various process pressures and hydrogen volumetric flow rates have been considered. Due to the fact that it is not economically viable to test every combination of possible process conditions experimentally, detailed 3D modeling has been used to get an overview of the influence of process parameters. Numerical simulations increased the understanding of the epitaxial process by calculating the heat and mass transfer distribution during the growth of gallium nitride. Appropriate chemical reactions were included in the numerical model which allowed for the calculation of the growth rate of the substrate. The results obtained have been applied to optimize homogeneity of GaN film thickness and its growth rate.

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“…Epitaxy from gaseous phase with use of organometallic compounds is a widely used method for manufacturing gallium nitride. Epitaxial layers obtained in Metal Organic Vapor Phase Epitaxial (MOVPE) growth process create monocrystalline material without grain boundaries [3]. The MOVPE process conditions can vary in certain ranges.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulations of heat and mass transfer in the MOVPE process for obtaining high-quality nitride-based semiconductors

Skibiński¹,

Caban²,

Lewandowska³

et al. 2015

Computational Methods and Experimental Measurements XVII

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In the present study heat and mass transfer in a Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S is addressed to better understand the epitaxial growth of gallium nitride (GaN). Existing knowledge about phenomena occurring in the Metal Organic Vapor Phase Epitaxial (MOVPE) process allows the production of high-quality nitride-based semiconductors. However, MOVPE process parameters can vary in certain ranges. The main goal of this study is the optimization of the process and improvement of the quality of crystal obtained. In order to investigate this subject a series of computer simulations have been performed. Numerical simulations of heat and mass transfer in the GaN epitaxial growth process have been performed to determine temperature distribution and velocity profile over the main growth area for various heating temperatures of reagents. Main heat transfer mechanisms during MOVPE process are convection and radiation. Reactor walls are made of quartz to obtain best temperature distribution over the growth area. The study exhibited that heat and mass distribution over the crystal growth area depends on heating temperature and mass flow rate of the inlet gases. Correlation of modeling results with the experiment will allow us to determine an optimal process temperature for obtaining crystals of the highest quality.

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Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

Cited by 9 publications

References 10 publications

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Numerical design of Metal‐Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth

Numerical simulations of heat and mass transfer in the MOVPE process for obtaining high-quality nitride-based semiconductors

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