Abstract:The paper presents the results of numerical simulations and experimental measurements of the epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy within a AIX-200/4RF-S reactor. The aim was to develop optimal process conditions for obtaining the most homogeneous crystal layer. Since there are many factors influencing the chemical reactions on the crystal growth area such as: temperature, pressure, gas composition or reactor geometry, it is difficult to design an optimal process. In this stu… Show more
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