Analyzing industrial CVD reactors using a porous media approach

Zou, Siyu; Xiao, Jie; Wu, Viola; Chen, Xiao

doi:10.1016/j.cej.2021.129038

Cited by 10 publications

(1 citation statement)

References 35 publications

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“…This approach allows for a faster and enhanced comprehension of the physics involved in the application. Several researchers have extensively explored numerical analyses of models for CVD reactors, specifically focusing on various objectives such as reactor geometry or the impact of gas flow rates [25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44]. For instance, Chaung et al [45] conducted a comprehensive 3D full-scale numerical simulation using COMSOL for GaAs film growth in a commercial horizontal MOCVD reactor.…”

Section: Introductionmentioning

confidence: 99%

Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability

Enayati,

Pimputkar

2024

Crystals

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High indium-content group-III nitrides are of interest to further expand upon our ability to produce highly efficient optical emitters at longer visible/IR wavelengths or to broaden bandgap engineering opportunities in the group-III nitride material system. Current synthesis approaches are limited in their capabilities, in part due to the low decomposition temperature of indium nitride. A new high-pressure spatial chemical vapor deposition (HPS-CVD) has been proposed which can operate at pressures up to 100 atmospheres, thereby significantly raising the growth temperature of indium nitride more than 100 kelvins and permitting the investigation of the impact of pressure on precursor stability and reactivity. This study systematically analyzes an HPS-CVD reactor design using computational fluid dynamic modeling in order to understand favorable operating conditions for growth of group III nitrides. Specifically, the relationship between inlet gas type (nitrogen, hydrogen, or ammonia), inlet gas velocity, gas flow rate, and rotational speed of the wafer carrier is evaluated for conditions under which a smooth and dominant vortex-free flow are obtained over the wafer. Heater power was varied to maintain a wafer temperature of 1250–1300 K. Favorable operating conditions were identified that were simultaneously met for all three gas types, providing a stable operating window for a wide range of gas chemistries for growth; at one atmosphere, a disk rotational speed of 50 rpm and a flow rate of 12 slm for all gas types is desired.

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