Effect of gravitational direction on dissolution and growth in GaSb/InSb/GaSb sandwich system

Murakami, Noriaki; Arafune, Koji; Koyama, Tadanobu; Kumagawa, Masashi; Hayakawa, Y.

doi:10.1016/j.jcrysgro.2003.11.068

Cited by 14 publications

(6 citation statements)

References 15 publications

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“…Based on the above method, indium composition profiles in the In-Ga-Sb solution were measured using the cylindrical shaped GaSb/InSb/GaSb sandwich sample [18]. In addition, they have investigated the growth rate and the solid-liquid interface shape of the In x Ga 1 À x Sb crystals using the heat pulse technique and numerical simulation [19][20][21][22]. Further investigations are needed to understand the dissolution and growth process, more in detail.…”

Section: Introductionmentioning

confidence: 99%

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Rajesh

Arivanandhan

Morii

et al. 2010

Journal of Crystal Growth

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a b s t r a c tDissolution process of GaSb into InSb melt was observed by an X-ray penetration method. The intensity of X-rays penetrated through the rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich sample was recorded by the CdTe line sensor detector. The penetrated X-ray intensities and images of the sample were obtained as a function of time and temperature. The gallium (Ga) composition profile of the sample was calculated as a function of time by making the calibration line with the penetrated X-ray intensities of GaSb and InSb standard samples. The calculated Ga composition profile of the grown sample agreed well with the data measured by energy dispersive X-ray spectroscopy analysis. The result suggested that lower GaSb seed dissolved faster than upper GaSb feed despite of the low temperature at the lower GaSb seed. It clearly indicates that the solutal transport induced by gravity strongly affects the dissolution process.

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Section: Introductionmentioning

confidence: 99%

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Rajesh

Arivanandhan

Morii

et al. 2010

Journal of Crystal Growth

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“…It was clarified that the shape of the growth interface and composition profiles were strongly influenced by gravity. The terrestrial experiments and numerical simulation were carried out to make clear the effect of gravity on the growth [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

Murakami¹,

Hikida²,

Konno³

et al. 2008

Journal of Crystal Growth

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The paper describes the method to grow homogeneous In x Ga 1Àx Sb ternary alloy bulk crystals. The In x Ga 1Àx Sb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to grow homogeneous crystal was given by the product of the temperature gradient and the growth rate. The temperature gradient was estimated from the indium composition profile in the grown crystal. The thermal pulses were applied during the holding process to estimate the growth rate. The respective growth rates were 0.45 and 0.19 mm/h for indium compositions of 0.8 and 0.6. The homogeneous In 0.8 Ga 0.2 Sb and In 0.6 Ga 0.4 Sb crystals were grown by decreasing the temperature with an optimized cooling rate of 0.77 and 0.33 1C/h, respectively.

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“…The effect of gravity on the shape of liquid-solid interface and composition profiles were clarified by comparing the experimental results on the Chinese recoverable satellite and on the earth [13,14]. The effects of the gravitational direction on the dissolution and growth processes were investigated in a gold furnace with different inclination angles on the earth [15]. The flow pattern and composition profiles were calculated as a function of gravity level [16,17].…”

Section: Introductionmentioning

confidence: 99%

Measurement of growth rate by thermal pulse technique and growth of homogeneous In Ga1−Sb bulk crystals

Murakami

Arafune

Koyama

et al. 2005

Journal of Crystal Growth

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Effect of gravitational direction on dissolution and growth in GaSb/InSb/GaSb sandwich system

Cited by 14 publications

References 15 publications

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

Measurement of growth rate by thermal pulse technique and growth of homogeneous In Ga1−Sb bulk crystals

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