Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films

Zhang, Yuewei; Wang, Xinqiang; Zheng, Xiantong; Chen, Guang; Ma, Dingyu; Xu, Fujun; Tang, Ning; Ge, Weikun; Shen, Bo

doi:10.7567/apex.6.021001

Cited by 13 publications

(9 citation statements)

References 20 publications

(31 reference statements)

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“…However, this measured high conductivity is consistent with a recent theoretical study that suggests an inherently high hole concentration in this p-type material . This very high level of doping is also in line with the low mobility observed, which may be due to impurity scattering, possibly compounded by grain boundary scattering that is also known to limit mobility …”

Section: Resultssupporting

confidence: 91%

“…90 This very high level of doping is also in line with the low mobility observed, which may be due to impurity scattering, 91 possibly compounded by grain boundary scattering that is also known to limit mobility. 92 2D materials are known to have nonisotropic conductivity, i.e., show better conductivity within a layer than between the layers. 93 To map the conductivity of different areas in the sample related to the topography of the sample, we used PF-TUNA, which can detect the electrical conductivity only along the z-axis of the flake.…”

Section: Chemistry Of Materialsmentioning

confidence: 99%

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Digenite (Cu₉S₅): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

et al. 2018

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Most of the recently discovered layered materials such as MoS 2 or MoSe 2 are n-type, while few materials, such as phosphorene, which suffers from rapid oxidation, are p-type. To form devices such as p−n junctions and heterojunctions, new p-type mono-/few-layers are needed. Here, we report a one-step synthesis of layered, crystalline, ptype copper sulfide by thermal annealing of a standard copper foil in an inert environment using chemical vapor deposition (CVD). Optical spectroscopies (photoluminescence and absorption) show definite correlating features around 2.5 eV. Surface photovoltage spectroscopy shows a photovoltage reduction around the same energy range, which would be expected from a bandgap of a p-type material, and p-type conductivity was also observed using a thermoelectric probe. TEM, XRD, and AFM showed that the synthesized material is layered and has a unique stoichiometry of Cu 9 S 5 . Using sonication and dropcasting, we succeeded to isolate few-layers and monolayers. We observed good bulk electrical conductivity and characterized the electrical conductivity of few-layer copper sulfide flakes using peak force tunneling atomic force microscopy (PF-TUNA). We observed an increase in conductivity for increasing number of layers. Given its conductivity and layered morphology, we tested the synthesized Cu 9 S 5 as an electrode for a Li-ion battery. The proposed bottom-up synthesis, which is simple and scalable, allows synthesizing bulk quantities of the p-type layered Cu 9 S 5 which can then be exfoliated (top-down) to deposit monolayer flakes on substrates. Combined with the progress achieved in the preparation of n-type layered materials, this p-type Cu 9 S 5 opens the door to the fabrication of 2D p−n heterojunctions.

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Section: Resultssupporting

confidence: 91%

Section: Chemistry Of Materialsmentioning

confidence: 99%

Digenite (Cu₉S₅): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

et al. 2018

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“…Lower carrier concentration can be attributed to fewer defects that are a consequence of the lower grain boundary cross-section in the large grained Cu 2 O films. The large grained (10 to 100 μm) thermally oxidized Cu 2 O shows even lower carrier concentration, to the order of 10 13 cm –3 . , Effect of grain boundaries on mobility is reported for many well-known materials, such as TiO 2 , Si, and InN. , As the grain boundaries are a potential barrier to carrier transport, the mobility gets affected, thereby lowering the device performance. − …”

Section: Results and Discussionmentioning

confidence: 99%

“…36,37 Effect of grain boundaries on mobility is reported for many well-known materials, such as TiO 2 , Si, and InN. 38,39 As the grain boundaries are a potential barrier to carrier transport, the mobility gets affected, thereby lowering the device performance.…”

Section: Resultsmentioning

confidence: 99%

Effect of Grain Boundary Cross-Section on the Performance of Electrodeposited Cu₂O Photocathodes

et al. 2018

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Large-grained Cu 2 O photocathodes in a superstrate configuration on a F-doped SnO 2 (FTO) coated glass substrate are synthesized via two-step electrodeposition. Only submicrometer sized grains were obtained during single-step electrodeposition in the potential window (−0.31 to −0.7 V vs Ag/AgCl) of stable Cu 2 O formation. We observe reductive decomposition of the Cu 2 O to Cu metal in the potential range of −0.7 to −0.98 V; bulk reduction of Cu 2+ in the solution to Cu metal occurs only beyond −0.98 V. In the potential window of stable Cu 2 O deposition, only the growth of the few nuclei occurs until a certain time. Minimal nucleation on the pristine FTO sites occurs during this period of deposition. The time to secondary nucleation is ∼6 min at −0.31 V and ∼15 s at −0.37 V. Interrupting the deposition at −0.31 V after 6 min and increasing the potential to −0.37 V leads to uniform, large grains (∼3 μm) of Cu 2 O. Photoinduced conducting atomic force microscopy reveals shunting and the presence of sub-bandgap states at the grain boundaries of Cu 2 O. Also, the lower carrier concentration (∼10 16 cm −3 ) in the large-grained Cu 2 O film obtained from Mott−Schottky analysis suggests a lower rate of Auger recombination. Thus, lowering the grain boundary crosssection in the two-step deposited film leads to a 30% increase in photocurrent at 0.0 V vs RHE.

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“…For electron transport, the effects of grain boundaries on electron mobility has been studied both experimentally [2][3][4] and theoretically [5][6][7]. Grain boundaries generally present an energy barrier to the transport of electrons and lead to a reduction of electron mobility [2,4]. However, perfect (defect-free) grain boundaries were found to be almost transparent to electron transport in highly symmetric grain boundaries [8].…”

Section: Introductionmentioning

confidence: 99%

Phonon Transmission Across Silicon Grain Boundaries by Atomistic Green's Function Method

Tian

2019

Front. Phys.

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Nanostructured materials are of great interest for many applications because of their special properties. Understanding the effect of grain boundaries on phonon transport in polycrystals is important for engineering nanomaterials with desired thermal transport properties. The phonon transport properties of 3 grain boundaries in silicon are investigated by employing atomistic Green's function method. Results show that similar to electron transport, the perfect grain boundary does not significantly reduce the thermal conductance, while defective grain boundaries can dramatically reduce the thermal conductance. This work may be helpful for the understanding of the underlying thermal transport mechanism across grain boundaries and the design of grain boundaries for energy applications.

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Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films

Cited by 13 publications

References 20 publications

Digenite (Cu₉S₅): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

Digenite (Cu₉S₅): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

Effect of Grain Boundary Cross-Section on the Performance of Electrodeposited Cu₂O Photocathodes

Phonon Transmission Across Silicon Grain Boundaries by Atomistic Green's Function Method

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Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films

Cited by 13 publications

References 20 publications

Digenite (Cu9S5): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

Digenite (Cu9S5): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

Effect of Grain Boundary Cross-Section on the Performance of Electrodeposited Cu2O Photocathodes

Phonon Transmission Across Silicon Grain Boundaries by Atomistic Green's Function Method

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Product

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Digenite (Cu₉S₅): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

Digenite (Cu₉S₅): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper

Effect of Grain Boundary Cross-Section on the Performance of Electrodeposited Cu₂O Photocathodes