Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy

Yu, Hung Wei; Chang, Edward Yi; Yamamoto, Yuichi; Tillack, Bernd; Wang, W. C.; Kuo, Chien-I; Wong, Yuen Yee; Nguyễn, Hồng Quân

doi:10.1063/1.3656737

Cited by 15 publications

(11 citation statements)

References 18 publications

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“…The surface roughness is improved with a 0.8 nm RMS value. This roughness is similar to the lowest one reported for 1 µm thick GaAs grown on 4 • -6 • offcut Si(001) substrate, 8,29,30 whereas we only grow 150 nm GaAs on quasi nominal substrates. Second, no V-groove feature is observed and indicating that an APBs-free surface is formed thanks to the Si surface preparation (SiConi + annealing) leading to the formation of double steps.…”

Section: -2supporting

confidence: 64%

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

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Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

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Section: -2supporting

confidence: 64%

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

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“…The surface roughness is improved and the RMS value drop to 0.8 nm. This roughness is similar to the one reported for 1 μm thick GaAs grown on 4°-6°offcut Si(001) substrate [18][19][20], despite the fact that only 150 nm of GaAs were grown. No V-groove feature is observed indicating that a APBs-free surface is formed.…”

Section: Apbs-free Gaas Growth On Si(001)supporting

confidence: 86%

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Martin¹,

Baron²,

Bogumulowicz³

et al. 2021

Post-Transition Metals

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III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. Integration of III-V devices onto a Si CMOS platform is already in production using III-V devices transfer. A promising way consists in using hetero-epitaxy processes to grow the III-V materials directly on Si and at the right place. To reach this objective, some challenges still needed to be overcome. In this contribution, we will show how to overcome the different challenges associated to the heteroepitaxy and integration of III-As onto a silicon platform. We present solutions to get rid of antiphase domains for GaAs grown on exact Si(100). To reduce the threading dislocations density, efficient ways based on either insertion of InGaAs/GaAs multilayers defect filter layers or selective epitaxy in cavities are implemented. All these solutions allows fabricating electrically pumped laser structures based on InAs quantum dots active region, required for photonic and sensing applications.

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“…6. Ge (100) substrates with six degree off toward the [111] direction were used, and GaAs epitaxy was grown on them using the graded-temperature arsenic prelayer.…”

Section: Experimental Methodsmentioning

confidence: 99%

Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition

Wang

Nguyễn

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Selective area growth of InP on lithography-free, nanopatterned GaAs (001) by metalorganic chemical vapor deposition J. Vac. Sci. Technol. B 32, 011210 (2014); 10.1116/1.4855035Effect of the Al0.3Ga0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metalorganic chemical vapor depositionIn this paper, the authors directly grew an InAs thin film (40 nm) by metalorganic chemical vapor deposition on GaAs/Ge substrates by using flow-rate modulation epitaxy with an appropriate V/III ratio. The growth of a high-quality InAs thin film with periodic 90 misfit dislocations was related to a uniform monolayer In atom distribution at the InAs/GaAs interface. The In monolayer effectively minimized the difference between surface energy and strain energy, producing a stable interface during material growth. The authors also found that a tightly controlled V/III ratio can improve the quality of the InAs islands on the GaAs/Ge heterostructures, though it is not the key factor in InAs thin-film growth.

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Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy

Abstract: Effect of the Al0.3Ga0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metalorganic chemical vapor deposition

Cited by 15 publications

References 18 publications

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition

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