Effect of Gallium Source Material on the Transparent Conducting Properties of Ga:ZnO Thin Films Through Metalorganic Chemical Vapor Deposition

Ho, Van Thi Thanh; Bach, Long Giang; Tran, Thanh; Nguyen, Nam Giang; Hong, Lu‐Sheng

doi:10.1080/15421406.2015.1076321

Cited by 4 publications

(3 citation statements)

References 27 publications

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“…Normally, vertical aligned NWs are preferred for some applications . Thus, for catalyst‐assisted MOCVD growth of aligned NWs, careful control of NW nucleation was required with methods such as (1) reducing catalyst layer thickness , (2) tuning the composition and thickness of alloy catalyst layer , (3) using the substrate of specific orientation , (4) varying the reactor pressure , (5) tuning the flow rate of H 2 carrier gas or silane , and (6) reducing the nucleation rate .…”

Section: Introductionmentioning

confidence: 99%

Growth of oriented GaN nanowires by controlling nucleation conditions

Zong

Huang

Song

et al. 2016

Crystal Research and Technology

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GaN nanowires (NWs) were grown on GaN(0001) coated sapphire substrate with Ni/Au catalyst by using metalorganic chemical vapor deposition. Nucleation conditions were investigated for improving the growth orientation of NWs. With decreasing catalyst thickness from 5nm/5nm to 2nm/2nm, the NW orientation was improved and the NW morphology was changed from taper to cylindrical, due to the varying of growth mode. Vertical alignment of NWs can be further improved by inserting an additional hightemperature (850 • C) nucleation step with an optimum V/III flow ratio of 20.

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Section: Introductionmentioning

confidence: 99%

Growth of oriented GaN nanowires by controlling nucleation conditions

Zong

Huang

Song

et al. 2016

Crystal Research and Technology

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“…34 Estimation of WF from a MOSFET device is a comparatively cheaper alternative and is a simple process. GZO thin films are synthesized by a variety of deposition techniques such as spray pyrolysis, 35 magnetron sputtering, 36 sol-gel deposition, 37 pulsed laser deposition, [38][39][40] ion plating, 41 metal-organic chemical vapor deposition 42,43 and atomic layer deposition. 44,45 In this report, we demonstrate a unique method of estimating the WF of RF sputtered GZO thin film from a MOSFET device.…”

mentioning

confidence: 99%

Work Function Estimation of Gallium-Doped Zinc Oxide Using Transparent Gate Electrode MOSFET

Saikumar

Sundaresh²,

Nehate³

et al. 2023

ECS J. Solid State Sci. Technol.

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Work function (WF) of radio-frequency (RF) sputtered Gallium-Doped Zinc Oxide (GZO) thin films has been estimated using the electrical characteristics of an n-metal oxide semiconductor field-effect transistor (n-MOSFET) device. Two identical sets of MOSFETs were fabricated in this work using a four-level mask. These MOSFETs have two different types of gate contact materials (Al and GZO, respectively). GZO was deposited by using RF magnetron sputtering technique while Al was deposited using thermal evaporation technique. By comparison of the work function of the two MOSFETs, the work function of RF sputtered GZO thin films was identified to be around 4.58 eV.

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“…13 On the other hand, Ga is less reactive with oxygen than other dopants during the deposition of films. 12 Many processing methods have been proposed for the deposition of GZO thin films, including metallorganic chemical vapor deposition, 14 molecular beam epitaxy, 15 chemical vapor deposition, 16 pulsed laser deposition, 17 and magnetron sputtering. 18 The sputtering method is recognized as the proper way to deposit high-quality GZO films owing to the good controllability, process stability, better adhesion of films, large-area uniformity, room-temperature processing, and low cost.…”

mentioning

confidence: 99%

Bandgap Engineered Ultraviolet Photodetectors with Gallium-Zinc-Oxide via Co-Sputtering Method

Yang

Chang

et al. 2018

ECS J. Solid State Sci. Technol.

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The authors report the fabrication of gallium-zinc-oxide (GZO) MSM ultraviolet photodetectors (PDs) via co-sputtering using Ga 2 O 3 and ZnO targets. The cutoff wavelength of the fabricated PDs is changed by adjusting the radio frequency power of the ZnO target during the co-sputtering procedure. The GZO thin films are investigated via physical analysis, such as atomic force microscopy, absorption coefficient spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the smooth GZO thin films are composed of a wide-gap semiconductor and a clearly n-type material. With a 10-V applied bias, the corresponding I Photo /I Dark ratios for three devices labeled A, B, and C are 1.4 × 10 3 , 9.3 × 10 2 , and 2.7 × 10 3 , respectively. Under corresponding cutoff wavelengths with a 0.2-V applied bias, the responsivity values are 2.7 × 10 −6 , 9 × 10 −6 , and 1.5 × 10 −4 for devices A, B, and C, respectively. Thus, these GZO ultraviolet PDs not only have a simple and low-cost fabrication process but also are suitable for ultraviolet sensing application owing to their outstanding electro-optical properties.

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Effect of Gallium Source Material on the Transparent Conducting Properties of Ga:ZnO Thin Films Through Metalorganic Chemical Vapor Deposition

Cited by 4 publications

References 27 publications

Growth of oriented GaN nanowires by controlling nucleation conditions

Growth of oriented GaN nanowires by controlling nucleation conditions

Work Function Estimation of Gallium-Doped Zinc Oxide Using Transparent Gate Electrode MOSFET

Bandgap Engineered Ultraviolet Photodetectors with Gallium-Zinc-Oxide via Co-Sputtering Method

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