Effect of Ga doping on micro/structural, electrical and optical properties of pulsed laser deposited ZnO thin films

Shinde, Shashikant D.; Deshmukh, Alka V.; Date, S. K.; Sathe, Vasant; Adhi, K. P.

doi:10.1016/j.tsf.2011.06.094

Cited by 36 publications

(13 citation statements)

References 22 publications

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“…The resistivity in the films is observed to gradually decrease from 0.14 to 1.06 9 10 -4 X cm as Ga contents are increased from 0.0 to 1.8 at.%, then increases to 3.95 9 10 -4 X cm. The lowest resistivity achieved in this study is *1.06 9 10 -4 X cm (electron concentration of 3.09 9 10 21 cm -3 ), which is lower than some previously reported values for the ZnO based TCO films [10,11]. With the Ga doping, the resistivity decreases because the Ga Zn acts as a more effective donor than oxygen vacancy in ZnO [11].…”

Section: Methodscontrasting

confidence: 67%

“…The (0002) peak for Ga doped ZnO films shifted to the higher angle, indicating the decrease of lattice constant along the c-axis due to Ga incorporation. Since bond length of Ga-O (1.92 Å ) is [10,16], Ga substituted at Zn sites would reduce the lattice constant along the c-axis, which is responsible for the shift of peak (0002). From Table I, it is demonstrated that the FWHM values increase with increasing Ga contents from 0.0 to 3.6 at.%, suggesting that the incorporation of Ga into ZnO film leads to degradation of crystal quality.…”

Section: Methodsmentioning

confidence: 99%

“…Figure 5 shows Raman spectra for the ZnO films grown at different Ga contents. All of the Raman spectra for Ga doped ZnO films are deconvoluted using the Gauss curves, in order to identify the low intensity peaks which otherwise would not have been resolved [10]. From Fig.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range

Chen

Saito

Tanaka

et al. 2016

J Mater Sci: Mater Electron

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Highly transparent Ga doped ZnO thin films were prepared on (0001) sapphire substrates by pulsed laser deposition. Hall-effect measurement reveals that electron concentration of the ZnO films can be controlled between 10 18 and 10 21 cm -3 by adjusting Ga contents in the targets. Optical measurements show the transmittance is above 60 % in the near-infrared wavelength region for all Ga doped ZnO films. Meanwhile, these films also have high crystal quality and smooth surface when the electron concentration up to 10 21 cm -3 , suggesting that the Ga doped ZnO is a promising material for using as transparent electrode for near infrared optoelectronic devices.

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Section: Methodscontrasting

confidence: 67%

Section: Methodsmentioning

confidence: 99%

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Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range

Chen

Saito

Tanaka

et al. 2016

J Mater Sci: Mater Electron

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“…Aluminum doping induced a decrease in average grain size. Many authors have reported that Al doping decrease the grain size due to the substitution of Zn ions (Rionic  0.074 nm) by the Al ion (Rionic  0.054 nm) and the difference between them [23].…”

Section: Structural Propertiesmentioning

confidence: 99%

Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications

Djelloul¹,

Larbah²,

Adnane³

et al. 2018

J. Nano- Electron. Phys.

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Zinc oxide (ZnO) is an n-type semiconductor with a large optical gap (3.4 eV) belonging to the transparent conductive oxides family (TCO). Strongly present as optical window in the chalcopyrite based structures CIGS and CIS. The structural, morphological, optical and electrical properties of ZnO thin films deposited onto glass substrates by ultrasonic spray pyrolysis (USP) technique have been investigated. For comparison and a better understanding of physical properties of undoped and (Al, In) doped ZnO thin films, a number of techniques, including XRD, SEM, optical absorption method (UV) and four-point probe technique were used to characterize the obtained ZnO thin films. Structural analysis shows that all the films were found to be polycrystalline with a wurtzite structure and show a (1 0 1) preferential growth. Besides, we noted that the preferred orientation does not depend on the nature of dopant. The band gaps (Eg) varied from 3.35 to 3.37 eV by Al and In dopants.

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“…Different technologies are used for preparation of transparent and conductive layers in dependence on the technique of deposition -chemical vapor deposition [4], solgel method [5], pulsed laser ablation [6], magnetron sputtering [7]. The magnetron sputtering is attractive and widely used because of possibility of large deposition area, film packing density and uniformity, low substrate temperature, etc.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of ZnO thin films doped with Al, V and Nb

Angelov

Lovchinov

Dimova‐Malinovska

2012

Phys. Status Solidi C

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This study addresses the optical and electrical properties of ZnO thin films doped with Al, V and Nb (ZnO:Al, ZnO:V and ZnO:Nb, respectively) deposited by r.f. magnetron sputtering in Ar atmosphere. The films are deposited on glass substrates without heating and heated at 100 °C, 150 °C and 275 °C. The optical spectra of transmittance and reflectance are measured and the optical band gap of the films is determined. The different films have band gap values in the range of 3.37‐3.57 eV. The films have about 90% transmittance and their resistivity is in the range of 8.5‐2.0 mΩ.cm. The influence of doping elements on the optical and electrical characteristics of the obtained thin films is discussed (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Effect of Ga doping on micro/structural, electrical and optical properties of pulsed laser deposited ZnO thin films

Cited by 36 publications

References 22 publications

Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range

Highly transparent conductive Ga doped ZnO films in the near-infrared wavelength range

Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications

Optical and electrical properties of ZnO thin films doped with Al, V and Nb

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