Optical and electrical properties of ZnO thin films doped with Al, V and Nb

Abstract

This study addresses the optical and electrical properties of ZnO thin films doped with Al, V and Nb (ZnO:Al, ZnO:V and ZnO:Nb, respectively) deposited by r.f. magnetron sputtering in Ar atmosphere. The films are deposited on glass substrates without heating and heated at 100 °C, 150 °C and 275 °C. The optical spectra of transmittance and reflectance are measured and the optical band gap of the films is determined. The different films have band gap values in the range of 3.37‐3.57 eV. The films have about 90% transmittance and their resistivity is in the range of 8.5‐2.0 mΩ.cm. The influence of doping elements on the optical and electrical characteristics of the obtained thin films is discussed (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Fabrication of chemically stable hydrogen- and niobium-codoped ZnO transparent conductive films

“…15 Co-doping has been widely employed to further improve the electrical and optical properties of ZnO lms. For example, band-gap widening and good conductivity of ZnO lms were achieved by their co-doping with group-III elements (Al, Ga, or In) and Mg. [16][17][18][19][20] Compared with Al-doped ZnO lms (AZO), the ZnO lms which were codoped with Al and another element from group III (B, Ga, or In) exhibit lower resistivities. [21][22][23] Though less-considered, the cation-anion co-doping of ZnO lms is worth exploring; the ZnO thin lms codoped with N and a group-III element (B, Al, or Ga) have a p-type conductivity.…”