2015
DOI: 10.1016/j.ceramint.2014.07.053
|View full text |Cite
|
Sign up to set email alerts
|

Effect of epitaxial growth on electrical properties of Ga-doped ZnO thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2015
2015
2023
2023

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 13 publications
(1 citation statement)
references
References 12 publications
0
1
0
Order By: Relevance
“…224,225 Larger, well-connected grains promote greater electronic conductivity by reducing grain boundary areas, and the number of grain interfaces charge carriers must travel across. 226,227 As shown by Eslava et al, this does come with the side-effect of significantly higher precursor usage rates for lower viscosity solvents (0.3 and 0.7 ml min À1 for toluene and THF respectively), which could be useful if the increased usage correlates to increased film growth rate/thickness, however, in this instance the films had similar thicknesses after the same duration, and thus the increased usage corresponds to wasted precursor and solvent.…”
Section: Deposition Requirementsmentioning
confidence: 96%
“…224,225 Larger, well-connected grains promote greater electronic conductivity by reducing grain boundary areas, and the number of grain interfaces charge carriers must travel across. 226,227 As shown by Eslava et al, this does come with the side-effect of significantly higher precursor usage rates for lower viscosity solvents (0.3 and 0.7 ml min À1 for toluene and THF respectively), which could be useful if the increased usage correlates to increased film growth rate/thickness, however, in this instance the films had similar thicknesses after the same duration, and thus the increased usage corresponds to wasted precursor and solvent.…”
Section: Deposition Requirementsmentioning
confidence: 96%