The superior optical and electronic properties of the two-dimensional (2D) rhenium disulfide (ReS 2 ) makes it suitable for nanoelectronic and optoelectronic applications. However, the internal defects coupled with with the low mobility and light-absorbing capability of ReS 2 impede its utilization in high-performance photodetectors. Fabrication of mixed-dimensional heterojunctions is an alternative method for designing high-performance hybrid photodetectors. This study proposes a mixed-dimensional van der Waals (vdW) heterojunction photodetector, containing high-performance onedimensional (1D) p-type tellurium (Te) and 2D n-type ReS 2 , developed by depositing Te nanowires on ReS 2 nanoflake using the dry transfer method. It can improve the injection and separation efficiency of photoexcited electron−hole pairs due to the type II p−n heterojunction formed at the ReS 2 and Te interface. The proposed heterojunction device is sensitive to visible-light sensitivity (632 nm) with an ultrafast photoresponse (5 ms), high responsivity (180 A/W), and specific detectivity (10 9 ), which is superior to the pristine Te and ReS 2 photodetectors. As compared to the ReS 2 device, the responsivity and response speed is better by an order of magnitude. These results demonstrate the fabrication and application potential of Te/ReS 2 mixed-dimensional heterojunction for highperformance optoelectronic devices and sensors.
The energy band alignment of AlN/β-Ga2O3 heterostructures was investigated by X-ray photoelectron spectroscopy. The valence band offsets were estimated to be −0.09 ± 0.1 eV (type II alignment) for AlN grown by plasma enhanced atomic layer deposition (PEALD) on β-Ga2O3 and 0.72 ± 0.1 eV (type I alignment) for AlN prepared by thermal atomic layer deposition (T-ALD) on β-Ga2O3, which gives the conduction band offsets of 1.39 ± 0.1 eV for PEALD AlN and 0.58 ± 0.1 eV for T-ALD AlN. The large difference in the band alignment for the AlN/β-Ga2O3 heterostructures is dominated by different levels of oxygen incorporation into the AlN films as a result of different deposition techniques. The determination of the band alignment of the AlN/β-Ga2O3 heterostructure has significant implications for the design of electronic and optical devices based on AlN/β-Ga2O3 heterojunctions.
Ultrathin Ga2O3 films nanomixed with few atom-thick SiO2 interlayer were deposited on silicon and quartz substrates through plasma-enhanced atomic layer deposition.
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