Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions

Gavrilin, Ilya; Громов, Д. Г.; Dronov, Alexey; Dubkov, S. V.; Trifonov, A. Yu.; Боргардт, Н. И.; Гаврилов, С. А.

doi:10.1134/s1063782617080115

Cited by 19 publications

(5 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several different methodologies are known for the deposition of crystalline semiconductor thin films and micro/nanomaterials. − The electrochemical liquid–liquid-solid (ec-LLS) method is a comparatively new entry to this list. The main premise in ec-LLS is that a liquid metal acts both as a cathode to electrochemically reduce an oxidized precursors into a zerovalent semiconductor and as a medium to nucleate and grow semiconductor crystals (Figure a, inset). − A consequence and primary advantage of this unorthodox approach is that ec-LLS does not necessarily involve high temperatures since an electrochemical stimulus rather than a thermal input is employed to drive material formation. This aspect makes ec-LLS potentially attractive for preparing electronic devices based on crystalline inorganic semiconductors directly on soft, thermally sensitive, and flexible substrates.…”

Section: Introductionmentioning

confidence: 99%

Critical Factors in the Growth of Hyperdoped Germanium Microwires by Electrochemical Liquid–Liquid–Solid Method

Acharya

Maldonado

2018

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

Factors that affect crystalline growth of germanium (Ge) micro-and nanowires by the electrochemical liquid−liquid solid (ec-LLS) method in water have been identified. Alloys of gallium and indium (Ga 1−x In x ) were used as liquid metal microdroplet electrodes in ec-LLS to determine whether the resultant conductivity of as-grown Ge could be strongly modulated by adjusting the fraction of Ga. Current−potential measurements on individual microwires were performed as a function of alloy composition. All alloys of Ga and In yielded Ge microwires with low resistivity and showed evidence of metal incorporation beyond the solubility limit (i.e., hyperdoping). The observed Ge crystal growth rates were insensitive to the alloy composition. In contrast, lowering the concentration of GeO 2 dissolved in solution and/or increasing the density of droplets noticeably slowed down the microwire growth rate. Cumulatively, these data help define what parameters should be useful in refining the ec-LLS method to produce materials with specific targeted properties.

show abstract

Section: Introductionmentioning

confidence: 99%

Critical Factors in the Growth of Hyperdoped Germanium Microwires by Electrochemical Liquid–Liquid–Solid Method

Acharya

Maldonado

2018

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…The temperature of Ge cathodic deposition process from aqueous solutions could significantly affect the layer structure deposited onto the surface. In the presence of metal particles in the molten state, filamentous Ge structures grew due to the cathodic reduction of Ge-containing ions on the electrode surface, followed by dissolution and crystallization in the melt at the substrate interface [84]. [85].…”

Section: −mentioning

confidence: 99%

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

2018

AMSE

View full text Add to dashboard Cite

Having mastered the technology of epitaxial deposition of crystalline thin films (i.e. homo and heteroepitaxy) on crystalline substrates has already been found providing better device designs with numerous advantages in the development of microelectronics devices and circuits. Consequently, mass-scale production of epitaxial thin films could successfully be developed and used in fabricating discrete devices and integrated circuits (ICs) using silicon/compound semiconductors commercially. Especially, realizing the hetero-epitaxial interfaces possessing two-dimensional electron/hole gas (2DEG/2DHG) sheets could offer very-high electron/hole mobilities for producing high-electronmobility transistors (HEMTs) and amplifiers for microwave/millimeter-wave communication systems. However, the major limitation of this technology was its requirement of extremely high cost infrastructures. Subsequently, the rising demands of the technologies to produce large-size displays/electronics systems, and large-numbers of sensors/ actuators in Internet of Thing (IoT) made it imminent for the researchers to explore replacing the existing cost intensive technologies by more affordable ones. In such an endeavor, developing a simpler and alternate epitaxial technology became imminent to look for. Incidentally, electrodeposition based epitaxy attracted the attention of the researchers by employing potentiostatic set-up for understanding the growth kinetics of the ionic species involved. While going through these studies, starting with the deposition of metallic/semiconducting thin films, atomic-layer epitaxial depositions could be successfully made and named as electrochemical atomic layer deposition (EC-ALD). Despite numerous attempts made for almost two decades in this fascinating field the related technology is not yet ready for its commercial exploitations. Some of the salient features of this process (i.e. commonly known as EC-ALD or EC-ALE) are examined here with recent results along with future prospects. Indexing Terms: Vapor Phase Epitaxy (VPE), Liquid Phase Epitaxy (LPE), Atomic Layer Deposition, Atomic Layer Epitaxy (ALE), and Molecular Beam Epitaxy (MBE); Electrochemical Atomic Layer Deposition (EC-ALD)

show abstract

“…In addition, the particle may not be completely molten but may have a core-shell structure, where the core is a solid phase and the shell is a liquid phase. Thus, fusible In particles can be successfully used as Ge nucleation sites (although the melting point of bulk In is approximately 156.6 • C) [20][21][22]30]. Another low-melting metal is tin (Sn), which has a slightly higher melting point (~232 • C) while being a cheaper and more common metal.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Synthesis and Application of Ge-Sn-O Nanostructures as Anodes of Lithium-Ion Batteries

et al. 2023

View full text Add to dashboard Cite

This work demonstrates the possibility of electrochemical formation of Ge-Sn-O nanostructures from aqueous solutions containing germanium dioxide and tin (II) chloride at room temperature without prior deposition of fusible metal particles. This method does not require complex technological equipment, expensive and toxic germanium precursors, or binding additives. These advantages will make it possible to obtain such structures on an industrial scale (e.g., using roll-to-roll technology). The structural properties and composition of Ge-Sn-O nanostructures were studied by means of scanning electron microscopy and X-ray photoelectron spectroscopy. The samples obtained represent a filamentary structure with a diameter of about 10 nm. Electrochemical studies of Ge-Sn-O nanostructures were studied by cyclic voltammetry and galvanostatic cycling. Studies of the processes of lithium-ion insertion/extraction showed that the obtained structures have a practical discharge capacity at the first cycle ~625 mAh/g (specific capacity ca. 625 mAh/g). However, the discharge capacity by cycle 30 was no more than 40% of the initial capacity. The obtained results would benefit the further design of Ge-Sn-O nanostructures formed by simple electrochemical deposition.

show abstract

Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions

Cited by 19 publications

References 20 publications

Critical Factors in the Growth of Hyperdoped Germanium Microwires by Electrochemical Liquid–Liquid–Solid Method

Critical Factors in the Growth of Hyperdoped Germanium Microwires by Electrochemical Liquid–Liquid–Solid Method

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

Electrochemical Synthesis and Application of Ge-Sn-O Nanostructures as Anodes of Lithium-Ion Batteries

Contact Info

Product

Resources

About