This work demonstrates the possibility of electrochemical formation of Ge-Sn-O nanostructures from aqueous solutions containing germanium dioxide and tin (II) chloride at room temperature without prior deposition of fusible metal particles. This method does not require complex technological equipment, expensive and toxic germanium precursors, or binding additives. These advantages will make it possible to obtain such structures on an industrial scale (e.g., using roll-to-roll technology). The structural properties and composition of Ge-Sn-O nanostructures were studied by means of scanning electron microscopy and X-ray photoelectron spectroscopy. The samples obtained represent a filamentary structure with a diameter of about 10 nm. Electrochemical studies of Ge-Sn-O nanostructures were studied by cyclic voltammetry and galvanostatic cycling. Studies of the processes of lithium-ion insertion/extraction showed that the obtained structures have a practical discharge capacity at the first cycle ~625 mAh/g (specific capacity ca. 625 mAh/g). However, the discharge capacity by cycle 30 was no more than 40% of the initial capacity. The obtained results would benefit the further design of Ge-Sn-O nanostructures formed by simple electrochemical deposition.
Исследованы закономерности анодного роста и установлены некоторые электронные характеристики оксидов меди на Cu,Zn(α)-сплавах (содержание цинка до 30 ат.%) с контролируемым уровнем структурно-вакансионной дефектности поверхностного слоя. Показано, что с ростом потенциала селективного растворения сплавов в 0.01 M HCl + 0.09 M KCl коэффициент взаимодиффузии компонентов, а также концентрация вакансий в поверхностном слое сплава увеличиваются. Основные закономерности анодного формирования оксидов Cu(I) и Cu(II) в 0.1 M KOH на α-латунях, а также потенциал плоских зон не зависят от объемной концентрации цинка и содержания сверхравновесных вакансий. Тем не менее, концентрация акцепторных дефектов в обоих оксидах меди, характеризующихся p-типом проводимости, заметно повышается с ростом вакансионной дефектности поверхностного слоя α-латуни.
Работа выполнена при финансовой поддержке Минобрнауки РФ в рамках Госзадания вузам на 2014-2016 гг., проект 675.
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