Effect of electric field on photoinduced changes in the optical properties of chalcogenide glassy semiconductors

Chalcogenide glassy semiconductors of the system As-Ss-S-Sn for X-ray imaging

“…A wide range of carriers and methods for recording optical information was developed and studied based on these materials. Chalcogenide glassy semiconductors are sensitive materials to electron-beam recording [1][2][3], photoinducted transformation (photodarkening, photorefraction) [4][5][6], and as photoresist materials sensitive in UV-visible regions [7]. The surface relief formation (mass-transport effect) in the glassy materials of the system As-Se-S under non-uniform illumination is presented in works [8][9].…”

Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

“…This comes from the fact that carrier transport in these materials, like chalcogenide glass, is controlled by traps; at any given point in time a fraction of the carriers is confined, and since the dipole moment of the filled and empty traps may vary broadly it changes the permittivity of the material. 25,45 A working model for the dielectric constant based on the electron trapping was given by Arkhipov et al 46 eðr; tÞ ¼ e 0 þ 4pj 0 ð 1 0 qðr; t; EÞdE;…”

The structure polymer/As-Se-S doped by Bi for X-ray imaging

“…Chalcogenide glassy semiconductors (CGS) of As-Se-S system exhibit a large implementation range, including optical information recording applications. CGS are sensitive materials to surface relief formation (mass-transport effect) under laser illumination [1][2], electron-beam recording [3][4][5], photoinduced transformation (photodarkening, photorefraction) [6][7][8], and as photoresist materials sensitive in UV-visible regions [9]. The photo-thermoplastic carriers, based on CGS [10], have high values of resolution power -up to 4000 mm -1 [11], diffraction efficiency -up to 40% [12], and 1-3 s real-time image formation [13].…”