Effect of dislocation trails on gold diffusion in Si

Abstract

Gold diffusion in plastically deformed Si containing dislocation trails has been carried out at temperatures 700 and 750 °C. The substitutional gold depth profile has been studied by successive sample etching and DLTS profiling. It is observed that the gold concentration in plastically deformed Si is about 10 times higher than that in defect‐free Si. Moreover, it is at least 10 times higher than that estimated for the dislocation density revealed in the samples under study. It is concluded that the observed increase in the substitutional gold concentration is associated with defects in the dislocation trails formed behind moving dislocations. It is assumed that both sinks for self‐interstitials and traps for interstitial gold present in the samples under study. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Platinum and gold diffusion monitor vacancy profiles induced into silicon wafers by aluminum alloying

“…Generally, the transition between interstitial gold and substitutional in defect‐free silicon was described to occur via kick out mechanism generating self‐interstitials 18. In defect free silicon, concentration of Au s was found to be smaller compared with that in silicon samples containing more vacancy or vacancy related complexes, indicating that vacancies could lead to increased concentration of Au s via dissociative mechanism 19. It is well known that gold has two deep levels in silicon.…”

Effect of copper on the recombination activity of extended defects in silicon

“…Specifically, it was shown that dislocations trails rather efficiently interacted with transition metals, inducing an increase in the impurity concentration (Au) compared to that in a defect free crystal and intensifying precipitation (Fe). In this case, the recombination activity of these dislocation trails is substantially altered [7][8][9][10]. In this context, demand has arisen for more thorough studies of the interaction of these defects with metal atoms and the influence of such interaction on the electrical properties of extended defects.…”

Electron‐Beam‐Induced Current and Deep‐Level Transient Spectroscopy Study of Dislocation Trails in Au‐Doped Si

“…It was well established that dislocations gliding in Si at 600-800 C generate some defects in the slip planes, so called the dislocation trails (DTs). [1][2][3][4][5][6][7][8][9][10][11][12] DTs can be revealed by the selective chemical etching [1] and by the electron-beam-induced current (EBIC) and laser-beam-induced current (LBIC) methods. [2][3][4][5][6][8][9][10][11] Due to their electrical activity, DTs introduce deep levels in the bandgap [3,5,12] and affect the electrical conductivity.…”