Electron‐Beam‐Induced Current and Deep‐Level Transient Spectroscopy Study of Dislocation Trails in Au‐Doped Si

Abstract

The properties of extended defects introduced by plastic deformation at 600 °C in n‐Si co‐doped with gold are studied by the electron‐beam‐induced current (EBIC) and deep‐level transient spectroscopy (DLTS) methods. It is shown that intrinsic point defects generated by moving dislocations stimulate the gold redistribution. As a result, regions depleted with gold are formed near dense dislocation rows. It is shown that dislocation trails decorated with gold are charged, which is a reason for the formation of bright EBIC contrast outside the Schottky barrier.