2022
DOI: 10.1016/j.infrared.2022.104188
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Effect of different ligand types on sensitivity of infrared photodetectors based on colloidal HgSe quantum dots

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Cited by 6 publications
(2 citation statements)
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“…The responsivity of the HgSe QD photodetectors was also varied with ligands adopted in a solid-phase treatment, showing that the best performance was obtained with the NH 4 SCN ligand. 128 4.1.2. Phototransistors.…”
Section: Quantity Symbol Unit Definitionmentioning
confidence: 99%
“…The responsivity of the HgSe QD photodetectors was also varied with ligands adopted in a solid-phase treatment, showing that the best performance was obtained with the NH 4 SCN ligand. 128 4.1.2. Phototransistors.…”
Section: Quantity Symbol Unit Definitionmentioning
confidence: 99%
“…A relatively high carrier mobility (1 cm 2 /Vs) in HgSe intraband CQD solids was obtained by utilizing a room-temperature mixed-phase ligand exchange method. Furthermore, the high mobility and controllable doping proved beneficial for a mid-infrared photodetector utilizing the 1S e to 1P e transition, with a 1000-fold improvement in response speed, which was several µs, a 55-fold increase in responsivity, which was 77 mA/W, and a 10-fold increase in detectivity, which was above 1.7 × 10 9 Jones at 80 K. In 2022, Sokolova et al compared the effects of four different types of ligands (EDT, BeSH, S 2− , and SCN) on the sensitivity of infrared photodetectors based on HgSe CQDs [133]. The maximum sensitivity of the photodetectors was obtained when SCN was used for the ligands.…”
Section: Hgse Cqd Photodetectorsmentioning
confidence: 99%