Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications

Tian, Ye; Luo, Hongqiang; Chen, Mengyu; Li, Cheng; Kershaw, Stephen V.; Rong, Zhang; Rogach, Andrey L.

doi:10.1039/d2nr07309a

Cited by 26 publications

(27 citation statements)

References 181 publications

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“…Other important performance metrics for photodetection include the EQE and detectivity, which reach values of 46% and 1.6 × 10 10 Jones at 180 K, respectively. While the values obtained are not among the highest at low temperatures, they are still comparable to those of HgTe quantum dot-based FETs with simple geometries . High-temperature performance of the HgTe NR FETs is limited by thermally induced charge carriers, and, as a result, noticeable responsivity fluctuations occur (Figure c).…”

Section: Resultsmentioning

confidence: 72%

“…While the values obtained are not among the highest at low temperatures, they are still comparable to those of HgTe quantum dot-based FETs with simple geometries. 49 High-temperature performance of the HgTe NR FETs is limited by thermally induced charge carriers, and, as a result, noticeable responsivity fluctuations occur (Figure 4c). Moreover, at room temperature, the EQE drops to 1%.…”

Section: Chemistry Of Materialsmentioning

confidence: 99%

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Cation-Exchange-Derived Wurtzite HgTe Nanorods for Sensitive Photodetection in the Short-Wavelength Infrared Range

et al. 2023

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HgTe nanocrystals are one of the most promising candidates for optoelectronic applications in short-and middlerange infrared wavelength regions. Fabrication of one-dimensional anisotropic HgTe nanoparticles with a wurtzite structure has been a challenging task, so far. We introduce a two-step cation-exchange strategy to synthesize wurtzite-phase HgTe nanorods, starting from CdTe nanorods and proceeding through the formation of a Cu 2−x Te intermediate. We demonstrate a means to tune the residual Cu content in the final HgTe nanorods from tens to less than one at % by adjusting the oleylamine and N,Ndimethylethylenediamine concentrations used during the Cu-to-Hg cation-exchange step. The photoluminescence peak position of the HgTe nanorods is tunable in the broad spectral range from 1500 to 2500 nm with the decrease of the residual Cu content. Fieldeffect transistors based on fabricated HgTe nanorods show favorable transport characteristics, namely, hole mobilities up to 10 −2 cm 2 V −1 s −1 and on/off current ratio up to 10 3 . The responsivity of photodetectors based on HgTe nanorods at 1340 nm reaches 1 A/W, and the detectivity is up to 10 10 Jones for the devices with a simple planar geometry. Results presented here indicate wide prospects for exploring the electronic properties of wurtzite HgTe nanorods, as well as cation-doping and ligand surface passivation effects on device performance, which is of great importance for the field of modern optoelectronics.

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Section: Resultsmentioning

confidence: 72%

Section: Chemistry Of Materialsmentioning

confidence: 99%

Cation-Exchange-Derived Wurtzite HgTe Nanorods for Sensitive Photodetection in the Short-Wavelength Infrared Range

et al. 2023

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“…This comparison disregards the influence of quantum confinement, which underlies all the optical properties of NCs. A more appropriate comparison can be made with semiconductor heterostructures, as NCs are gaining popularity in infrared sensing, [ 46 ] a field where these heterostructures have been utilized for decades. Quantum well‐based heterostructures in semiconductors offer a combination of confinement, for optical design, and efficient charge transport, occurring either within the well or perpendicular to it.…”

Section: Competition Between Confinement and Transportmentioning

confidence: 99%

Stop Blaming Hopping Conduction in Nanocrystal Arrays, Use it for Active Photonics!

Ledos,

Dang,

Cavallo

et al. 2024

Adv Materials Technologies

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Nanocrystals (NCs) are now established building blocks for photonic applications. However, their integration for optoelectronics has not yet reached the same level of maturity, in part due to the perceived bottleneck that is the inherent limited mobility resulting from hopping conduction. Significant efforts are made to improve this mobility, notably by tuning the particle surface chemistry to enable larger interparticle electronic coupling, and values of mobility of ≈10 cm2 V−1 s−1 have been achieved. It is acknowledged that this value remains significantly lower than those obtained in 2D electron gases but is on par with the mobility reported for vertical transport in epitaxially grown heterostructures with similar confinement energies. Since there appears to be limited perspectives for further increasing mobility values, a suggestion is made that efforts should instead be directed toward exploring the potential benefits offered by hopping conduction. One of these benefits is the bias dependence of the diffusion length, which plays a key role in designing bias‐reconfigurable optical responses for NC‐based devices. Some recent achievements in building bias‐activated devices will be reviewed and the essential criteria for designing future structures will be discussed. Ultimately, hopping conduction is an opportunity to generate new functionalities that low‐disorder materials would be unable to provide.

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“…HgTe nanocrystals (NCs) have emerged as a unique platform to address infrared wavelengths thanks to the gapless bulk HgTe and band engineering with quantum confinement. By tailoring the particle surface chemistry, NC arrays can be made conductive and photoconductive. − As a result, their use in advanced devices dedicated to infrared sensing and imaging appears as a viable alternative to epitaxially grown thin films. Compared with devices relying on epitaxially grown narrow-bandgap semiconductors, NCs lift the constraints on epitaxial growth, thereby facilitating the coupling to the readout circuit, including those with a few-micrometer pitch circuit .…”

Section: Introductionmentioning

confidence: 99%

In Situ Mapping of the Vectorial Electric Field within a Nanocrystal-Based Focal Plane Array Using Photoemission Microscopy

Khalili

Cavallo

Bossavit

et al. 2023

ACS Appl. Electron. Mater.

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Within a few years, nanocrystal-based infrared devices have achieved significant progress and advancements, including high-quality imaging systems. This raises the need to develop tools that can probe the active material of the device in situ and in operando to gain a deeper understanding of their operation beyond the overall response of the device. Here, we investigate a short-wave infrared imager based on HgTe nanocrystals with photoconductive operation, which now proposes imaging at wavelengths beyond the traditional InGaAs technology. We demonstrate that we can use photoemission microscopy to probe the energy landscape of this imaging array. Finally, we further use the high spatial resolution of the method to get access to the vectorial distribution of the electric field.

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Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications

Abstract: The commercial infrared (IR) photodetectors based on epitaxial growth inorganic semiconductors, e.g. InGaAs and HgCdTe, suffer from the high fabrication cost, poor compatibility with silicon integrated circuits, rigid substrate and...

Cited by 26 publications

References 181 publications

Cation-Exchange-Derived Wurtzite HgTe Nanorods for Sensitive Photodetection in the Short-Wavelength Infrared Range

Cation-Exchange-Derived Wurtzite HgTe Nanorods for Sensitive Photodetection in the Short-Wavelength Infrared Range

Stop Blaming Hopping Conduction in Nanocrystal Arrays, Use it for Active Photonics!

In Situ Mapping of the Vectorial Electric Field within a Nanocrystal-Based Focal Plane Array Using Photoemission Microscopy

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