Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering

Kuang, Xu-Ping; Zhang, Huayu; Wang, Gui‐Gen; Lin, Chen; Zhu, Can; Jin, Lei; Sun, Rui; Han, Jia-Jun

doi:10.1016/j.spmi.2012.08.003

Cited by 35 publications

(25 citation statements)

References 34 publications

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“…The evolution of the thickness of the deposited AlN:Er film could be attributed to two aspects: At elevated substrate temperature conditions the adatoms diffuse and rearrange themselves to fill the gap between the columnar crystals, thus the thickness of the AlN:Er films obtained under higher substrate temperatures should be smaller, and the film structure should be denser and more compact, which means larger index of refraction; high temperature substrate could also facilitate desorption processes of the adatoms with lower kinetic energies and incapable to satisfy the thermodynamic conditions at the growing surface [41]. More adatoms might be desorbed from the substrate maintained at higher temperature, so the thickness of the deposited film decreases with the increase of the substrate temperature.…”

Section: Resultsmentioning

confidence: 99%

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health

et al. 2018

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The integrity and reliability of surface protective coatings deposited on metal surface could be in-situ monitored via the attractive luminescence sensing technique. In this paper, we report the influence of substrate temperature on the properties of erbium (Er) doped aluminum nitride (AlN) film, which could be applied as a luminescent layer for monitoring the health of multilayered Al/AlN coating. The AlN:Er films were deposited via reactive radio-frequency magnetron sputtering, and the silicon substrate temperature was varied from non-intentional heating up to 400 °C. The composition, morphology, crystalline structure, and dielectric function of the AlN:Er films deposited under these different substrate temperature conditions were studied. These properties of the AlN:Er films show strong correlation with the substrate temperature maintained during film fabrication. The obtained AlN:Er films, without further annealing, exhibited photoluminescence peaks of the Er3+ ions in the visible wavelength range and the strongest photoluminescence intensity was observed for the AlN:Er film deposited with the temperature of substrate kept at 300 °C. The results demonstrated in this work offer guidance to optimize the substrate temperature for the deposition of AlN:Er film for future application of this sensing technique to thin metal components.

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Section: Resultsmentioning

confidence: 99%

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health

et al. 2018

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“…C-axis oriented AlN i.e. (002) plane has higher piezoelectric property d33 (5.0961 pm/V) compared to the other crystal orientations [8,9]. Also, AlN electromechanical coupling coefficient (kr²) is closely related to the film's orientation [10].…”

Section: Introductionmentioning

confidence: 99%

Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

Iqbal

Walker

Hold

et al. 2019

J Mater Sci: Mater Electron

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We perform pulsed DC sputtering of aluminium nitride (002) thin films on top of cubic silicon carbide-on-silicon (100) substrates at different substrate temperatures and deposition powers. The films are characterised using the following parameters: FWHM of diffraction peak, FWHM of the rocking curve, residual stress, thickness, deposition rate, grain size, and surface roughness. The overall quality of the films improve at escalated temperature and power. However, they have hillocks on the surface, which is caused by high amount of tensile stress.

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“…The piezoelectric properties of AlN strongly depend on the crystallographic orientation. The caxis oriented AlN thin films are preferred for the piezoelectric applications because of its high d33 (5.0961 pm/V) [6,7]. Furthermore, the coupling coefficient of the AlN thin filmbased devices is closely related to the c-axis orientation of the deposited film [8].…”

Section: Introductionmentioning

confidence: 99%

“…In another work, Kuang et al. [7] investigated the influences of substrate temperature between the range of 30 to 700 ˚C to the chemical composition, crystalline structure and surface morphology of the AlN (002) films on top of the sapphire substrate. They concluded that the substrate temperature of 300 ˚C assisted in producing the highly c-axis films.…”

Section: Introductionmentioning

confidence: 99%

The sputtering of AlN films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures

Iqbal

Walker

Hold

et al. 2017

J Mater Sci: Mater Electron

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AlN thin films have been sputtered on top of the on-axis and 4 o off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures. The grazing angle incident XRD scans show that all films have major peak at (002) plane and minor peaks at (101) and (102) planes. The AlN films are further characterized in terms of the FWHM of the rocking curve, surface morphology and deposition rate. We observed that the increasing substrate temperature improve the crystal quality of the AlN (002) films, but it has minimal impact on the surface roughness and deposition rate. We also extracted the values for the bi-axial stress, the grain size and the piezoelectric coefficient. Overall, the off-axis 3C-SiC/Si (111) substrates provide a better template for the sputtering of AlN (002) films in term of better crystal quality, lower surface roughness and lower bi-axial stress.

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Effect of deposition temperature on the microstructure and surface morphology of c-axis oriented AlN films deposited on sapphire substrate by RF reactive magnetron sputtering

Cited by 35 publications

References 34 publications

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health

Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

The sputtering of AlN films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures

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