Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

Iqbal, Adeel; Walker, Gregg B.; Hold, Leonie; Fernandes, Alanna; lacopi, Alan; Mohd-Yasin, F.

doi:10.1007/s10854-019-02480-w

Cited by 10 publications

(7 citation statements)

References 31 publications

(47 reference statements)

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“…The DC voltage V dc applied on the sample scanned through −8 V → 0 V → +8 V → 002) plane. [6,7,[30][31][32] It could be observed in Figure 2a that the phase 𝜑 and amplitude A of the sample oscillation are V dc -dependent and a butterfly-like characteristic of A(V dc ) is obtained. The displace-ment of the sample caused by piezoelectricity is defined as d pz (V dc ) = Acos𝜑/G.…”

Section: Resultsmentioning

confidence: 96%

“…Even though the bandgap of 𝜖-Ga 2 O 3 is lower than that of AlN, our previous work has shown that 𝜖-Ga 2 O 3 thin films grown by MOCVD possess a resistivity of ≈10 4 Ωcm, which is high enough for RF resonator application. [44] To date, for the fabrication of RF resonators, AlN thin film is usually grown by Magnetron Sputtering at low temperature, [30][31][32] which is much easier than the MOCVD growth of 𝜖-Ga 2 O 3 investigated in this work. However, 𝜖-Ga 2 O 3 has demonstrated such a unique property that it possesses a good balance between the bandgap (resistivity) and piezoelectricity and is a better material choice for application in RF resonators.…”

Section: Resultsmentioning

confidence: 99%

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ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

Chen

Lü

et al. 2022

Advanced Science

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The explosion of mobile data from the internet of things (IoT) is leading to the emergence of 5G technology with dramatic frequency band expansion and efficient band allocations. Along with this, the demand for high-performance filters for 5G radio frequency (RF) front-ends keeps growing. The most popular 5G filters are constructed by piezoelectric resonators based on AlN semiconductor. However, AlN possesses a piezoelectric constant d 33 lower than 5 pm V −1 and it becomes necessary to develop novel semiconductors with larger piezoelectric constant. In this work, it is shown that strong piezoelectricity exists in 𝝐-Ga 2 O 3 . High-quality phase-pure 𝝐-Ga 2 O 3 thin films with a relatively low residual stress are prepared. A switching spectroscopy piezoelectric force microscope (SS-PFM) measurement is carried out and the piezoelectric constant d 33 of 𝝐-Ga 2 O 3 is determined to be ≈10.8-11.2 pm V −1 , which is twice as large as that of AlN. For the first time, surface acoustic wave (SAW) resonators are demonstrated on the 𝝐-Ga 2 O 3 thin films and different vibration modes resonating in the GHz range are observed. The results suggest that 𝝐-Ga 2 O 3 is a great material candidate for application in piezoelectric devices, thanks to its wide bandgap, strong piezoelectric property, small acoustic impedance, and low residual stress.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

Chen

Lü

et al. 2022

Advanced Science

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“…The AFM scan rate was at 2.44 Hz. The peak-to-valley (PV) value was measured as 8.68 nm and the root mean square (RMS) roughness was measured as 0.87 nm, while the lowest surface roughness in [ 41 ] was 2.3 nm, showing that the AlN film is very flat.…”

Section: Resultsmentioning

confidence: 99%

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Fei

Ren

2021

Micromachines

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As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

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“…After that, the reactive sputtering process occurred. We described the interactions that occurred between the ions between the target and the substrate inside the chamber in the study by Iqbal et al, [25,26] so readers are referred to both articles for detailed explanation.…”

Section: Methodsmentioning

confidence: 99%

“…That is, the samples for this experiment on top of Si (111) were batch fabricated together with samples that were sputtered on top of SiC/Si (100) substrate and SiC/Si (111) substrate. The data from the latter two substrates were published in the study by Iqbal et al [25,26] One can see the difference in the results from these three papers, which are all summarized in tabular form for easier comparison. To ensure the stability of the data, we randomized the sequence of substrate temperature and sputtering power during the sputtering of samples.…”

Section: Methodsmentioning

confidence: 99%

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

Iqbal

Walker

Hold

et al. 2021

Physica Status Solidi (b)

Self Cite

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Herein, pulsed DC sputtering of the AlN film on top of the Si (111) substrate is reported on. First, major articles on the reactive sputtering of AlN film on top of Si (111) substrate that were published in the past 30 years are tabulated. Then, a sputtering recipe to produce a consistent and high‐crystal‐quality (as measured by the full width at half maximum [FWHM] of rocking curve) AlN film across varying substrate temperatures (250–450 °C) and sputtering powers (1200–2400 W) is proposed. In addition, the influence of both parameters to in‐plane stress is demonstrated, in agreement with similar trends that have been reported in the literature for AlN films on other substrates. The best sample is produced at a substrate temperature of 350 °C and sputtering power of 1800 W, resulting in FWHM of rocking curve of 1.84°, surface roughness of 1 nm, and in‐plane stress of +300 MPa. The recipe herein is beneficial for integration of AlN thin film in complementary metal–oxide–semiconductor and micro‐electromechanical system processes.

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Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

Cited by 10 publications

References 31 publications

ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

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Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power

Cited by 10 publications

References 31 publications

ε‐Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

ε‐Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

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ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

ε‐Ga₂O₃: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators