The sputtering of AlN films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures

Iqbal, Adeel; Walker, Gregg B.; Hold, Leonie; Fernandes, Alanna; Tanner, Philip; Iacopi, Alan; Mohd-Yasin, F.

doi:10.1007/s10854-017-8163-0

Cited by 7 publications

(9 citation statements)

References 38 publications

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“…The intensity of the AlN (002) peak decreased afterwards. Our own work found similar optimum temperature range between 350 to 400 °C [ 73 ]. We deposited AlN film on top of 3C-SiC-0n-Si (111) substrate.…”

Section: Compilation Of Recipes and The Roles Of The Sputtering Pamentioning

confidence: 69%

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Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Iqbal

Mohd-Yasin

2018

Sensors

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148

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We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is collated from the analysis of around 80 journal articles that sputtered this film on variety of substrate materials, processes and equipment. This review will be a good starting point to catch up with the state-of-the-arts research on the reactive sputtering of AlN (002) thin film, as well as its evolving list of piezoelectric applications such as energy harvesters.

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Section: Compilation Of Recipes and The Roles Of The Sputtering Pamentioning

confidence: 69%

“…In addition, there are many impurities that are absorbed through the surface of the film at high temperature. Both factors decrease the film’s crystal quality [ 73 ]. Table 2 shows the ranges of the substrate temperature.…”

Section: Compilation Of Recipes and The Roles Of The Sputtering Pamentioning

confidence: 99%

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Iqbal

Mohd-Yasin

2018

Sensors

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148

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“…The combination of HiPIMS with additional amount of heat showing the best result in dealing with a far target to substrate distance for this case. In other report, impurities could be absorbed by thin-film surfaces at a much higher temperatures which may affect the overall crystal quality of thin-film (Walker et al , 2018).…”

Section: Resultsmentioning

confidence: 98%

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Azman

Nayan

Hasnan

et al. 2021

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PurposeThis study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique. Design/methodology/approachHiPIMS system was used to deposit AlN thin film at a low output power of 200 W. The ramping temperature was introduced to substrate from room temperature to maximum 100°Cat the initial deposition of thin-film, and the result was compared to thin-film sputtered with no additional heat. For the heat assistance AlN deposition, the substrate was let to cool down to room temperature for the remaining deposition time. The thin-films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) while the MIS Schottky diode characteristic investigated through current-voltage response by a two-point probe method. FindingsThe XRD pattern shows significant improvement of the strong peak of the c-axis (002) preferred orientation of the AlN thin-film. The peak was observed narrowed with temperature assisted where FWHM calculated at 0.35° compared to FWHM of AlN thin film deposited at room temperature at around 0.59°. The degree of crystallinity of bulk thin film was improved by 28% with temperature assisted. The AFM images show significant improvement as low surface roughness achieved at around 0.7 nm for temperature assisted sample compares to 3 nm with no heat applied. Originality/valueThe small amount of heat introduced to the substrate has significantly improved the growth of the c-axis AlN thin film, and this method is favorable in the deposition of the high-quality thin film at the low-temperature process.

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“…After that, the reactive sputtering process occurred. We described the interactions that occurred between the ions between the target and the substrate inside the chamber in the study by Iqbal et al, [25,26] so readers are referred to both articles for detailed explanation.…”

Section: Methodsmentioning

confidence: 99%

“…That is, the samples for this experiment on top of Si (111) were batch fabricated together with samples that were sputtered on top of SiC/Si (100) substrate and SiC/Si (111) substrate. The data from the latter two substrates were published in the study by Iqbal et al [25,26] One can see the difference in the results from these three papers, which are all summarized in tabular form for easier comparison. To ensure the stability of the data, we randomized the sequence of substrate temperature and sputtering power during the sputtering of samples.…”

Section: Methodsmentioning

confidence: 99%

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

Iqbal

Walker

Hold

et al. 2021

Physica Status Solidi (b)

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Herein, pulsed DC sputtering of the AlN film on top of the Si (111) substrate is reported on. First, major articles on the reactive sputtering of AlN film on top of Si (111) substrate that were published in the past 30 years are tabulated. Then, a sputtering recipe to produce a consistent and high‐crystal‐quality (as measured by the full width at half maximum [FWHM] of rocking curve) AlN film across varying substrate temperatures (250–450 °C) and sputtering powers (1200–2400 W) is proposed. In addition, the influence of both parameters to in‐plane stress is demonstrated, in agreement with similar trends that have been reported in the literature for AlN films on other substrates. The best sample is produced at a substrate temperature of 350 °C and sputtering power of 1800 W, resulting in FWHM of rocking curve of 1.84°, surface roughness of 1 nm, and in‐plane stress of +300 MPa. The recipe herein is beneficial for integration of AlN thin film in complementary metal–oxide–semiconductor and micro‐electromechanical system processes.

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The sputtering of AlN films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures

Cited by 7 publications

References 38 publications

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

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