Effect of deposition conditions on the physical and electrical properties of reactive sputtered molybdenum nitride film

Nitride or Oxynitride? Elucidating the Composition–Activity Relationships in Molybdenum Nitride Electrocatalysts for the Oxygen Reduction Reaction

“…Several structures have previously been reported under similar synthesis conditions, including the B1-MoN, γ-Mo2N, and β-Mo2N phases. 43,49 In this work, we identify these Mo2NO films as rocksalt γ-Mo2N due to the peak profile and lattice constant from GI-XRD, the cubic symmetry observed by TEM (Figure 2A and Figure S7), and the 2:1 Mo:N stoichiometry observed by ToF-SIMS (Figure S2). Specifically, GI-XRD shows diffraction peaks at d-spacings 49 The peaks at 1.52 and 1.05 Å are attributed to the Si substrate (Figure S6).…”

“…In addition to catalysis, reactively sputtered molybdenum nitride thin films have been extensively studied for various applications, including as hard coatings, superconductors, and diffusion barriers for electronic devices. [40][41][42][43][44] For these applications, precise control of crystal structure and mechanical and electrical properties is desired, and thus the synthesis mechanism has been wellexplored and described. 45,46 A variety of structures, including crystalline rocksalt (face-centered cubic lattice, fcc) γ-Mo2N, tetragonal β-Mo2N, and hexagonal (hex) δ-MoN as well as amorphous and mixed phase films, have been obtained by modification of substrate temperature, nitrogen partial pressure, and target power during sputtering.…”

Nano-Scale Surface Morphology Evolution of Cu/Ti Thin Films

“…[8][9][10][11][12][13][14][15] Film thickness significantly influences the progress of agglomeration. 16 20 After the same heat-treatment, the film thickness is thinner, the agglomeration occurs easier.…”

“…1 2 In order to overcome the disadvantages of Cu such as fast diffusion into Si 3 and SiO 2 , 4 and poor adhesion to most dielectric materials, a suitable diffusion barrier/adhesion promoter is necessary. [5][6][7][8][9][10][11][12][13][14][15] However, it is observed that after high temperature annealing, copper films on some barriers may exhibit agglomeration, such as MoN, 8 TiN, 9 Ti-Si-N, 10 TiB 2 , 11 12 WC, 13 Ta, 14 ITO. 15 With the annealing temperature increasing, Cu films systems exhibit grain growth, void formation, agglomeration and chemical reaction with the Si substrate (formation of Cu 3 Si).…”

“…15 With the annealing temperature increasing, Cu films systems exhibit grain growth, void formation, agglomeration and chemical reaction with the Si substrate (formation of Cu 3 Si). [8][9][10][11][12][13][14][15] Ti can also be employed as the barrier material. However, there are lacks of investigations on agglomeration of Cu in Cu/Ti systems.…”