Effect of CuCl<sub>2</sub> treatment on RF magnetron-sputtered CdSe thin films for potential photovoltaic usage

Ibrahim, Mohamad Nasir Mohamad; Chelvanathan, Puvaneswaran; Mottakin, M.; Muhammad, Ghulam; Miraz, Mahdi H.; Akhtaruzzaman, Md.; Shahiduzzaman, Md.; Sobayel, K.; Kamal, N.

doi:10.35848/1347-4065/ac6b00

Cited by 3 publications

(3 citation statements)

References 52 publications

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“…Based on the previous reports, it has been determined that annealing at higher temperature is necessary for the re-crystallization process, which may due to improvement in crystallinity [31]. Average crystallite size calculated using Scherrer formula [32] and micro strain calculated using equation [33] of AT300 sample, are around 26 nm and 8.85 10 .…”

Section: Structure Analysismentioning

confidence: 99%

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Nisha,

Sarkar,

Kumar

et al. 2024

Phys. Scr.

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Tin sulfide (SnS) has attracted significant interest due to its advantageous optoelectrical characteristics and abundant presence in nature. Post-deposition treatments (PDTs) are frequently employed to enhance the crystallinity of chalcogenide-based solar cells. This study examined the influence of the post-deposition heat treatment procedure on thermally evaporated SnS thin film. The post-deposition annealing process, as determined by XRD and AFM studies, supplies the necessary thermal energy for re-crystallization, potentially resulting in a modification of crystallite dimensions. The occurrence of Sn-S polytypes was examined using Raman and XPS studies. Annealing causes changes in the optical properties, as observed through optical analysis, which can be attributed to the improvement in crystallinity. Subjecting the material to annealing at temperature of 300 °C greatly improves both mobility and conductivity, while also causing a change in conduction type. The observed variations in conduction type are attributed to the differing ratios between the amounts of Sn2+ and Sn4+. This strategy offers a novel route for the fabrication of thin-film photovoltaic cells by using a p-type buffer layer.

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Section: Structure Analysismentioning

confidence: 99%

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Nisha,

Sarkar,

Kumar

et al. 2024

Phys. Scr.

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“…Several techniques are available to deposit thin CdSe films such as RF magnetron sputtering [5], chemical bath deposition (CBD) [6], thermal evaporation [7], and quantum dots [8], depending on the desired specifications in the produced thin film [9]. The RF sputtering process is renowned for its ability to provide uniform film deposition without ion damage over a large area [10,11]. Moreover, the performance of CdSe thin films can be optimized by altering the properties concerned for an absorber or window layer using chloride treatment [12].…”

Section: Introductionmentioning

confidence: 99%

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

et al. 2023

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The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 × 10−3 to 4.0 × 10−3, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl3-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl3, but the resistivity remained in the order of 103 ohm/cm2, suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl3 showed promising characteristics as well as the viability of treatment with 0.10 M InCl3 as an alternative to standard CdCl2 treatment.

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“…The perovskite solar cell (PSC) is a third-generation solar cell capable of converting solar light energy into electrical energy. It can potentially decrease the energy problem with lower manufacturing costs and higher efficiencies [2]. The chemical formula of perovskite is ABX 3 , where X is a halide anion, A is an organic or inorganic cation such as CH 3 NH 3 + or Cs + , and B is Pb 2+ or Sn 2+ , etc.…”

Section: Introductionmentioning

confidence: 99%

Design and defect study of Cs₂AgBiBr₆ double perovskite solar cell using suitable charge transport layers

Alkhammash

Mottakin

Hossen

et al. 2022

Semicond. Sci. Technol.

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In this work, perovskite solar cells (PSCs) based on Cs2AgBiBr6 with various electron transport layers and hole transport layers were modeled and analyzed. The device structure is FTO/ZnO/Cs2AgBiBr6/NiO/Au. PCE is practically saturated after the perovskite thickness of 700 nm. PCE declines from 21.88 % to 1.58 % when carrier lifetime decreases from 103 ns to 10−1 ns. Deep level defects at mid-band gap energy of the perovskite layer can trap both carriers, allowing greater carrier recombination. Carrier capture cross-sectional area greatly impacts on cell performance. When subjected to high temperatures (T), the carrier mobility would diminish because carrier scattering increases the cell resistance. That’s why raising T from 300 K to 400 K, the value of built-in potential (Vbi) decreases from 1.17 V to 0.98 V. Device shows maximum efficiency when FTO is used as the front electrode, and Au is used as a back electrode. The optimum device, made of ITO/ZnO/Cs2AgBiBr6/NiO/Au, provides Voc = 1.29 V, Jsc = 20.69 mA/cm2, FF = 81.72 %, and PCE = 21.88 %.

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Effect of CuCl₂ treatment on RF magnetron-sputtered CdSe thin films for potential photovoltaic usage

Cited by 3 publications

References 52 publications

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

Design and defect study of Cs₂AgBiBr₆ double perovskite solar cell using suitable charge transport layers

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Effect of CuCl2 treatment on RF magnetron-sputtered CdSe thin films for potential photovoltaic usage

Cited by 3 publications

References 52 publications

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers

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Product

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Effect of CuCl₂ treatment on RF magnetron-sputtered CdSe thin films for potential photovoltaic usage

Design and defect study of Cs₂AgBiBr₆ double perovskite solar cell using suitable charge transport layers